5秒后页面跳转
捷配首页

Datasheet > MX29LV640BTC-12
MX29LV640BTC-12 PDF预览

MX29LV640BTC-12

更新时间： 2023-12-18 00:00:00
品牌 Logo 应用领域
旺宏电子 - Macronix 存储
页数 文件大小 规格书
70页 1166K
描述
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

阅读下载

中文翻译

获取价格

MX29LV640BTC-12 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, LEAD FREE, PLASTIC, MO-142, TSOP1-48针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.76
最长访问时间：120 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PDSO-G48JESD-609代码：e3
长度：18.4 mm内存密度：67108864 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
部门数/规模：8,127端子数量：48
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：8K,64K最大待机电流：0.000015 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

MX29LV640BTC-12 数据手册

 浏览型号MX29LV640BTC-12的Datasheet PDF文件第2页浏览型号MX29LV640BTC-12的Datasheet PDF文件第3页浏览型号MX29LV640BTC-12的Datasheet PDF文件第4页浏览型号MX29LV640BTC-12的Datasheet PDF文件第5页浏览型号MX29LV640BTC-12的Datasheet PDF文件第6页浏览型号MX29LV640BTC-12的Datasheet PDF文件第7页 
MX29LV640T/B  
64M-BIT[8Mx8/4Mx16] SINGLEVOLTAGE3VONLY  
FLASHMEMORY  
FEATURES  
GENERAL FEATURES  
SOFTWARE FEATURES  
• Single Power Supply Operation  
• Support Common Flash Interface (CFI)  
- 2.7 to 3.6 volt for read, erase, and program opera-  
tions  
• 8,388,608 x 8 / 4,194,304 x 16 switchable  
• Sector structure  
- 8KB (4KW) x 8 and 64KB(32KW) x 127  
• Sector Protection/Chip Unprotect  
- Provides sector group protect function to prevent  
program or erase operation in the protected sector  
group  
- Flash device parameters stored on the device and  
provide the host system to access.  
• Erase Suspend/ Erase Resume  
- Suspends sector erase operation to read data from  
or program data to another sector which is not being  
erased  
• Status Reply  
- Data polling & Toggle bits provide detection of pro-  
gram and erase operation completion  
- Provides chip unprotect function to allow code  
changes  
- Provides temporary sector group unprotect function  
for code changes in previously protected sector groups  
• Secured Silicon Sector  
HARDWARE FEATURES  
• Ready/Busy (RY/BY) Output  
- Provides a hardware method of detecting program  
and erase operation completion  
• Hardware Reset (RESET) Input  
- Provides a hardware method to reset the internal  
state machine to read mode  
- Provides a 128-word area for code or data that can  
be permanently protected.  
- Once this sector is protected, it is prohibited to pro-  
gram or erase within the sector again.  
• Latch-up protected to 250mA from -1V to Vcc + 1V  
• Low Vcc write inhibit is equal to or less than 1.5V  
• Compatible with JEDEC standard  
- Pin-out and software compatible to single power sup-  
ply Flash  
• WP Pin  
- Write protect (WP) function allows protection of two  
outermost boot sectors, regardless of sector protect  
status  
PACKAGE  
PERFORMANCE  
• High Performance  
• 48-pinTSOP  
• 63-ball CSP  
• 64-ball Easy BGA  
- Fast access time: 90/120ns  
- Fast program time:11us/word, 45s/chip (typical)  
- Fast erase time: 0.9s/sector, 45s/chip (typical)  
• Low Power Consumption  
- Low active read current: 10mA (typical) at 5MHz  
- Low standby current: 0.2uA (typ.)  
• Minimum 100,000 erase/program cycle  
• 20-year data retention  
GENERAL DESCRIPTION  
The standard MX29LV640T/B offers access time as fast  
as 90ns, allowing operation of high-speed microproces-  
sors without wait states. To eliminate bus contention,  
the MX29LV640T/B has separate chip enable (CE) and  
output enable (OE) controls.  
The MX29LV640T/B is a 64-mega bit Flash memory or-  
ganized as 8M bytes of 8 bits or 4M bytes of 16 bits.  
MXIC's Flash memories offer the most cost-effective and  
reliable read/write non-volatile random access memory.  
The MX29LV640T/B is packaged in 48-pin TSOP, 63-  
ball CSP and 64-ball Easy BGA. It is designed to be  
reprogrammed and erased in system or in standard  
EPROM programmers.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
P/N:PM0920  
REV. 1.2, NOV. 05, 2003  
1
1234567...70

中文翻译

下载PDF

与MX29LV640BTC-12相关器件

型号 品牌 获取价格 描述 数据表
MX29LV640BTC-12G Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-90 Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-90G Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTI-12 Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTI-12G Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTI-90 Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTI-90G Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTMC-90G Macronix

获取价格

 		Flash, 4MX16, 90ns, PDSO44, ROHS COMPLIANT, SOP-44
MX29LV640BTTC-12 Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTC-12G Macronix

获取价格

 		64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MX29LV640BTC-12相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证