5秒后页面跳转
捷配首页

Datasheet > MVUPT15RTR7E3
MVUPT15RTR7E3 PDF预览

MVUPT15RTR7E3

更新时间： 2024-11-27 17:26:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 165K
描述
Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

阅读下载

中文翻译

获取价格

MVUPT15RTR7E3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-216AA包装说明：R-PDSO-G1
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.74Is Samacsys：N
其他特性：LOW LEAKAGE CURRENT最小击穿电压：16.7 V
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-216AAJESD-30 代码：R-PDSO-G1
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：150 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
最大重复峰值反向电压：15 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MVUPT15RTR7E3 数据手册

 浏览型号MVUPT15RTR7E3的Datasheet PDF文件第2页浏览型号MVUPT15RTR7E3的Datasheet PDF文件第3页 
UPT5e3 – UPT48e3  
UPT5Re3 – UPT48Re3  
UPTB8e3 – UPTB48e3  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSORS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
Microsemi’s new Powermite UPT series transient voltage suppressors  
feature oxide-passivated chips, with high-temperature solder bonds for high  
surge capability, and negligible electrical degradation under repeated surge  
conditions. Both unidirectional and bidirectional configurations are available.  
In addition to its size advantages, Powermite package includes a full  
metallic bottom (cathode) that eliminates possibility of solder flux entrapment  
at assembly and a unique locking tab serving as an integral heat sink.  
DO-216AA  
Innovative design makes this device fully compatible for use with automatic  
insertion equipment.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Powermite Package with standoff voltages 5 to 48 V  
•
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Both Unidirectional polarities and Bidirectional:  
Anode to case bottom (UPT5e3 thru UPT48e3)  
Cathode to case bottom (UPT5Re3 thru UPT48Re3)  
Bidirectional (UPTB8e3 thru UPTB48e3)  
•
•
Protection from switching transients & induced RF  
New improved lower leakage current for the  
UPT5Re3  
•
•
•
Clamping time less than 100 pico-seconds for  
unidirectional  
•
•
•
Integral heat sink / locking tabs  
Full metallic bottom eliminates flux entrapment  
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, or JANTXV are available by  
adding MQ, MX, or MV, prefixes respectively to part  
numbers, e.g. MXUPT15e3, MVUPTB28e3,  
MSPUPU10e3, etc.  
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: UPT5//UPT5R/UPTB8 to17  
Class 2: UPT5//UPT5R/UPTB8 to12  
(also add e3 suffix to each part number)  
•
RoHS Compliant with e3 suffix part number  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy compound meeting UL94V-0  
FINISH: Annealed matte-Tin plating over copper  
and readily solderable per MIL-STD-750, method  
2026  
•
•
Operating and Storage Temperature: –65ºC to  
+150ºC  
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)  
UPT5Re3: 600 Watts  
UPT5e3 thru UPT48e3: 1000 Watts  
UPT8Re3 thru UPT48Re3: 1000 Watts  
UPTB8e3 thru UPTB48e3: 1000 Watts  
Peak Pulse Power at 10/1000 µs (See Figure 2).  
UPT5Re3: 100 Watts  
•
•
POLARITY: Cathode or anode to TAB 1 (bottom)  
as described in Marking below and Figure 5  
MARKING:  
Anode to TAB 1: T plus the last two digits of part  
number, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪  
Cathode to TAB1: U plus last two digits of part  
number, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪  
Bipolar: B plus the last two digits of part number,  
e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.  
Please note dot suffix (for e3 suffix)  
•
UPT5e3 thru UPT48e3: 150 Watts  
UPT8Re3 thru UPT48Re3: 150 Watts  
UPTB8e3 thru UPTB48e3: 150 Watts  
Impulse Repetition Rate (duty factor): 0.01%  
•
•
•
•
•
WEIGHT: 0.016 gram (approximate)  
Thermal resistance: 15ºC/W junction to base tab or  
240ºC/W junction to ambient when mounted on FR4  
PC board with 1 oz copper  
See package dimension on last page  
Tape & Reel option: Standard per EIA-481-B using  
12 mm tape with 3,000 per 7 inch reel or 12,000  
per 13 inch reel (add TR7 or TR13 suffix to part  
number)  
•
•
Steady-State Power: 2.5 Watts (base tab ≤112ºC)  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright © 2007  
6-26-2007 REV G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

与MVUPT15RTR7E3相关器件

型号 品牌 获取价格 描述 数据表
MVUPT15TR13 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT15TR13E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT15TR7 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT15TR7E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT17 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT17E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT17E3/TR13 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT17E3/TR7 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT17R MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT17RE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

与MVUPT15RTR7E3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证