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MV32001

更新时间： 2024-01-03 04:13:04

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管变容二极管
页数	文件大小	规格书
4页	189K
描述
GaAs Varactor Diodes Hyperabrupt

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MV32001 数据手册

GaAs Varactor Diodes

Hyperabrupt

MV30011 – MV34010

Features

●

High Q Values for Higher Frequency Performance

●

Large Tuning Ratios

Low Reverse Current

Gamma Values to 1.5

Available as Bondable Chips and as

Packaged Diodes

●

Available in Chip-on-Board Packaging

Custom Designs Available

Applications

●

Description

VCOs

Microsemi’s GaAs hyperabrupt junction varactor

diodes are fabricated from epitaxial layers grown

at Microsemi by the Chemical Vapor Deposition

technique. The layers are processed at using

proprietary techniques resulting in varactors with

constant gamma, high Q factor and repeatable

tuning curves. These varactors are available in a

variety of microwave ceramic packages or

bondable chips for operation from UHF to

millimeter wave frequencies.

●

Phase-Locked Oscillators

●

High Q Tunable Filters

●

Phase Shifters

●

Pre-Selectors

Maximum Ratings

Reverse

oltage

Breakdown

50 mA 25°C

+20 dBm 25°C

Voltage

Forward Current

Incident Power

Operating

emperature

-55°C to +175°C

-55°C to +200°C

Storage emperature

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

Specifications are subject to change. Consult factory for the latest information.

¹The MS3000 Series of products are

supplied with a RoHS complaint Gold finish

These devices are ESD sensitive and must be handled using ESD precautions.

Microsemi

Rev: 2009-05-11

Microwave Products

Page 1

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3 4

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