Datasheet > MV1N5366BE3

MV1N5366BE3

更新时间： 2024-11-21 04:17:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
4页	188K
描述
Zener Diode, 39V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MV1N5366BE3 技术参数

是否无铅：	不含铅	生命周期：	Transferred
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.27
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JESD-30 代码：	O-PALF-W2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	参考标准：	MIL-19500
标称参考电压：	39 V	表面贴装：	NO
技术：	ZENER	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	5%	工作测试电流：	30 mA

MV1N5366BE3 数据手册

1N5333B thru 1N5388B, e3

Silicon 5 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt

Zeners provides voltage regulation in a selection from 3.3 to 200 volts with

different tolerances as identified by specific suffix letter on the part number.

These plastic encapsulated Zeners have moisture classification of Level 1

with no dry pack required and are also available in various military

equivalent screening levels by adding a prefix identifier as also described in

the Features section. They may be operated at high maximum dc currents

with adequate heat sinking with their comparatively low thermal resistance

design. Microsemi also offers numerous other Zener products to meet

higher and lower power applications.

T-18

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N5333 to 1N5388B

Zener voltage available 3.3V to 200V

• Regulates voltage over a broad operating current and

temperature range

• Wide selection from 3.3 to 200 V

Standard voltage tolerances are plus/minus 5% with B

suffix and 10 % with A suffix identification

• Flexible axial-lead mounting terminals

• Nonsensitive to ESD per MIL-STD-750 Method 1020

• Withstands high surge stresses

• Minimal changes of voltage versus current as

specified by voltage regulation (ΔV_Z)

•

Tight tolerances available in plus or minus 2% or 1%

with C or D suffix respectively

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available

by adding MQ, MX, or MV prefixes respectively to

part numbers.

• High specified maximum current (I_ZM) when

adequately heat sunk

•

Surface mount equivalents available as SMBJ5333 to

SMBJ5388B, or SMBG5333B to SMBG5388B

• Moisture classification is Level 1 per IPC/JEDEC J-

STD-020B with no dry pack required

RoHS Compliant devices available by adding e3 suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 5.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

TERMINALS: Leads, Tin-Lead or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, method 2026

+150^ºC

Thermal Resistance: 25 ^ºC/W junction to lead at 3/8

(10 mm) lead length from body, or 85^ºC/W junction

to ambient when mounted on FR4 PC board (1oz

Cu) with 4 mm²copper pads and track width 1

mm, length 25 mm

Steady-State Power: 5 watts at T_L< 25^oC 3/8 inch

(10 mm) from body, or 1.47 watts at T_A= 25^ºC

when mounted on FR4 PC described for thermal

resistance (also see Figure 1)

•

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end.

•

MARKING: Part number

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.7 grams

See package dimensions on last page

•

Forward voltage @1.0 A: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

8-06-2008 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MV1N5366BE3相关器件

型号	品牌	获取价格	描述	数据表
MV1N5366BE3/TR8	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
MV1N5366BE3TR	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
MV1N5366C	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 2%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
MV1N5366C/TR8	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 2%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
MV1N5366CE3	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 2%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
MV1N5366CE3/TR8	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 2%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
MV1N5366CE3TR	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 2%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
MV1N5366CTR	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 2%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
MV1N5366D	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 1%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
MV1N5366D/TR8	MICROSEMI	获取价格	Zener Diode, 39V V(Z), 1%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN

与MV1N5366BE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MV1N5366BE3

MV1N5366BE3 技术参数

MV1N5366BE3 数据手册

与MV1N5366BE3相关器件

与MV1N5366BE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MV1N5366BE3

MV1N5366BE3 技术参数

MV1N5366BE3 数据手册

与MV1N5366BE3相关器件

与MV1N5366BE3相关文章

您还可以找

您在本页遇到什么问题？