Datasheet > MURS320-SMB

MURS320-SMB

更新时间： 2024-11-21 01:23:55

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2079K
描述
SMB Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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MURS320-SMB 数据手册

MURS320 THRU MURS360

HD BK84

SMB Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diode

Features

●I

SMB

●VRRM

200V-600V

●High surge current capability

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● MURS3X0

X From 2 To 6

MURS3

4 0

Item

Symbol

Unit

Test Conditions

6 0

V_RRM

Repetitive Peak Reverse Voltage

200

300

400

280

600

420

140

MaximumRMS Voltage

210

RMS

60HZ Half-sine wave, Resistance

load, T_L=100℃

I_F(AV)

3.0

Average Forward Current

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

100

T_J

℃

-55~+150

Junction Temperature

Storage Temperature

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃Unless otherwise specified)

MURS3

Item

Symbol

Unit

Test Condition

6 0

4 0

V_F

I_F=3.0A

Peak Forward Voltage

0.875

1.25

Maximum reverse recovery

time

t_rr

I_F=0.5A,I_R=1.0A,I_rr=0.25A

I_RRM1

I_RRM2

T =25℃

μA

V_RM=V_RRM

Peak Reverse Current

T =100℃

100

55¹⁾

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

Resistance(Typical)

℃/W

12¹⁾

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)

copper pad areas

igh Diode Semiconductor

12 3 4

中文翻译

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