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MURHF860CT

更新时间： 2024-11-25 03:35:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 88K
描述
ULTRAFAST RECTIFIER 8.0 AMPERES, 600 VOLTS

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中文翻译

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MURHF860CT 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：PLASTIC, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：5.43
其他特性：FREE WHEELING DIODE应用：ULTRA FAST RECOVERY POWER
外壳连接：ISOLATED配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2.8 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
最大非重复峰值正向电流：100 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.035 µs子类别：Rectifier Diodes
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30Base Number Matches：1

MURHF860CT 数据手册

 浏览型号MURHF860CT的Datasheet PDF文件第2页浏览型号MURHF860CT的Datasheet PDF文件第3页 
MURHF860CT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These state-of-the-art SWITCHMODE power rectifiers are  
designed for use in switching power supplies, inverters and as free  
wheeling diodes.  
http://onsemi.com  
Features  
ULTRAFAST RECTIFIER  
8.0 AMPERES, 600 VOLTS  
• Ultrafast 35 Nanosecond Recovery Times  
• 150°C Operating Junction Temperature  
• Electrically Isolated. No Isolation Hardware Required  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
3
2
• High Temperature Glass Passivated Junction  
• High Voltage Capability to 600 V  
1
• Low Leakage Specified @ 150°C Case Temperature  
• Pb−Free Package is Available*  
MARKING  
DIAGRAM  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 1.9 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds  
AYWW  
UH860G  
A K A  
ISOLATED TO−220  
CASE 221D  
MAXIMUM RATINGS (Per Leg)  
STYLE 3  
Rating  
Symbol  
Value  
Unit  
1
2
3
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
600  
V
RRM  
RWM  
V
V
R
Average Rectified Forward Current  
I
4.0  
8.0  
A
A
F(AV)  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
(Rated V , T = 120°C) Total Device  
R
C
Peak Repetitive Forward Current  
I
16  
FM  
UH860 = Device Code  
G
AKA  
(Rated V , Square Wave,  
R
= Pb−Free Package  
= Diode Polarity  
20 kHz, T = 120°C)  
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
100  
A
FSM  
ORDERING INFORMATION  
Operating Junction and Storage Tempera-  
ture Range  
T , T  
J
−65 to +150  
°C  
stg  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS (Per Leg)  
MURHF860CT  
TO−220  
50 Units/Rail  
50 Units/Rail  
Rating  
Symbol  
Value  
Unit  
MURHF860CTG  
TO−220  
(Pb−Free)  
Max Thermal Resistance, Junction−to−Case  
R
4.1  
°C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 4  
MURHF860CT/D  
123

中文翻译

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MURHF860CT 替代型号

型号 品牌 替代类型 描述 数据表
MURHF860CTG ONSEMI

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