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MURA260T3G PDF预览

MURA260T3G

更新时间: 2024-02-29 13:15:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 49K
描述
Surface Mount Ultrafast Power Rectifier

MURA260T3G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
其他特性:FREE WHEELING DIODE应用:HIGH VOLTAGE ULTRA FAST RECOVERY POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.075 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

MURA260T3G 数据手册

 浏览型号MURA260T3G的Datasheet PDF文件第2页浏览型号MURA260T3G的Datasheet PDF文件第3页浏览型号MURA260T3G的Datasheet PDF文件第4页 
MURA260T3  
Preferred Device  
Surface Mount  
Ultrafast Power Rectifier  
Ideally suited for high voltage, high frequency rectification, or as  
free wheeling and protection diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
Features  
Small Compact Surface Mountable Package with J−Bend Leads  
Rectangular Package for Automated Handling  
ULTRAFAST RECTIFIER  
2 AMPERES, 600 VOLTS  
High Temperature Glass Passivated Junction  
Low Forward Voltage Drop (1.2 V Max @ 2.0 A, T = 150°C)  
J
Pb−Free Package is Available  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 70 mg (Approximately)  
SMA  
CASE 403D  
PLASTIC  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
Polarity: Polarity Band Indicates Cathode Lead  
ESD Protection: Human Body Model > 4000 V (Class 3)  
Machine Model > 400 V (Class C)  
U5J  
AYWW G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
600  
V
RRM  
V
RWM  
V
U5J = Device Code  
R
A
Y
= Assembly Location  
= Year  
Average Rectified Forward Current  
I
A
A
F(AV)  
@ T = 145°C  
1.0  
2.0  
L
WW = Work Week  
@ T = 110°C  
L
G
= Pb−Free Package  
Non-Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
30  
FSM  
ORDERING INFORMATION  
Operating Junction Temperature Range  
T
−65 to +175  
°C  
J
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
MURA260T3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
Characteristic  
Symbol  
Value  
Unit  
MURA260T3G  
SMA  
(Pb−Free)  
Thermal Resistance, Junction−to−Lead  
Psi  
24  
°C/W  
JL  
(T = 25°C) (Note 1)  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
(Note 2)  
R
L
216  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
1. Rating applies when surface mounted on the minimum pad size recommended,  
PC Board FR−4.  
and best overall value.  
2. In compliance with JEDEC 51, these values (historically represented by R  
)
q
JL  
are now referenced as Psi  
.
JL  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 3  
MURA260T3/D  
 

MURA260T3G 替代型号

型号 品牌 替代类型 描述 数据表
MURA260T3 ONSEMI

完全替代

Surface Mount Ultrafast Power Rectifier
SURA8260T3G ONSEMI

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PMEG6020EP NXP

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