Datasheet > MUR820PBF_11

MUR820PBF_11

更新时间： 2024-11-24 10:41:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	154K
描述
Ultrafast Rectifier, 8 A FRED Pt

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MUR820PBF_11 数据手册

VS-MUR820PbF

Vishay Semiconductors

Ultrafast Rectifier, 8 A FRED Pt^®

FEATURES

Base

cathode

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

Cathode Anode

TO-220AC

DESCRIPTION/APPLICATIONS

VS-MUR820PbF is the state of the art ultrafast recovery

rectifier specifically designed with optimized performance of

forward voltage drop and ultrafast recovery time.

PRODUCT SUMMARY

Package

TO-220AC

8 A

The planar structure and the platinum doped life time

control, guarantee the best overall performance,

ruggedness and reliability characteristics.

I_F(AV)

V_R

200 V

V_Fat I_F

0.975 V

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

_rrtyp.

See Recovery table

175 °C

T_Jmax.

Diode variation

Single die

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

MAX.

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

200

Total device, rated V_R, T_C= 150 °C

Rated V_R, square wave, 20 kHz, T_C= 150 °C

100

I_FSM

I_FM

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

200

0.975

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

0.895

V_R= V_Rrated

250

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

Junction capacitance

Series inductance

C_T

L_S

8.0

Measured lead to lead 5 mm from package body

Document Number: 94523

Revision: 04-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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