MUR620FCT-B

更新时间： 2024-11-23 13:11:55

品牌	Logo	应用领域
美微科 - MCC		二极管局域网超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	94K
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中文翻译

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数据手册

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MUR620FCT-B 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MUR605CT

THRU

MUR660CT

Features

Glass passivated chip

Superfast switching time for hight efficiency

Low reverse leakage current

High surge capacity

6 Amp Super Fast

Glass Passivated

Rectifier

50 to 600 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

TO-220AB

Microsemi

Catalog

Device

Marking

Maximum

Recurrent

Peak

Maximum Maximum

RMS

Voltage

Blocking

Voltage

Number

Reverse

Voltage

50V

100V

200V

MUR605CT MUR605CT

MUR610CT MUR610CT

MUR620CT MUR620CT

MUR640CT MUR640CT

MUR660CT MUR660CT

35V

70V

140V

280V

420V

50V

100V

200V

400V

600V

400V

600V

PIN 1.

PIN 2.

PIN 3.

PIN 4.

ANODE

CATHODE

ANODE

CATHODE

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

6 A

T_C= 130°C

Peak Forward Surge

Current

I_FSM

75A

8.3ms, half sine

Maximum Forward

Voltage Drop Per

Element

V_F

I_FM= 3 A per

element;

T_A= 25°C*

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

605CT-620CT

ꢇ ꢇ ꢇ ꢇ

.975V

1.25 V

INCHES

ꢂꢁꢄ

ꢀꢁꢂ

ꢂꢈꢉ

ꢂꢁꢄ

14.48

9.66

ꢂꢈꢉ

15.75

10.28

4.82

ꢄꢆꢊꢃ

640CT- 660CT

.570

.380

.160

.025

.142

.620

.405

.190

Maximum DC

4.06

Reverse Current At

Rated DC Blocking

Voltage

I_R

5.0uA T_J= 25°C

.035

.147

0.64

3.61

0.89

3.73

2.66

3.93

50uA

T_J= 100°C

.095

.110

.105

.155

2.42

2.80

.018

.500

.045

.100

.080

.045

.025

.562

.060

.120

.110

.055

0.46

12.70

1.14

2.54

2.04

1.14

0.64

14.27

1.52

3.04

2.79

1.39

Maximum Reverse

Recovery Time

T_rr

I_F=8.0A,

I_rr=0.25A

605CT- 620

35ns

60ns

75ns

640CT

.235

------

.255

.050

5.97

-----

6.48

1.27

660CT

.045

------

1.15

-------

*Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

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