MUR420-E3
Vishay General Semiconductor
www.vishay.com
Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-201AD
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
200 V
VRRM
IFSM
150 A
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
trr
25 ns
VF
0.710 V
175 °C
DO-201AD
Single die
TJ max.
Package
Diode variations
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VALUE
200
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRWM
VDC
200
V
Maximum DC blocking voltage
200
Maximum average forward rectified current at TA = 80 °C (fig. 1)
IF(AV)
4.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load
IFSM
150
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
0.710
0.875
0.890
5.0
UNIT
TJ = 150 °C
3.0 A
4.0 A
Maximum instantaneous
forward voltage
(1)
VF
V
TJ = 25 °C
TJ = 25 °C
Maximum instantaneous reverse current
at rated DC blocking voltage
(1)
IR
μA
ns
TJ = 150 °C
150
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
25
Maximum reverse recovery time
trr
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
35
25
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
Maximum forward recovery time
tfr
Note
(1)
Pulse test: tp = 300 μs pulse, duty cycle 2 %
Revision: 19-Feb-16
Document Number: 88685
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000