MUR2020CT
■Electrical Characteristics
Min
Typ
Max
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
I
FM=10.0A @Tj=25℃
-
0.90
1.0
VFM
Instantaneous forward voltage drop per diode
V
IFM=10.0A @Tj=150℃
RM=VRRM
0.78
-
0.9
5
V
IRRM1
IRRM2
-
-
-
-
-
Tj=25℃
RM=VRRM
DC reverse current at
rated DC blocking voltage per diode
uA
V
30
100
Tj=150℃
IF=0.5A IRM=1A
25
35
-
I
RR=0.25A Tj=25℃
Reverse Recovery Time
Trr
34.5
50.0
5.35
8.25
90.5
200.0
ns Tj=25℃
Tj=125℃
-
-
Tj=25℃
A
IF=10A
di/dt=-200A/us
VRM=100V
Peak recovery current
IRRM
-
-
-
-
Tj=125℃
-
Tj=25℃
nC
Reverse recovery charge
Qrr
-
Tj=125℃
Thermal Characteristics (Tj=25℃Unless otherwise specified)
■
MUR2020CT
PARAMETER
Between junction and case
Between junction and Air
SYMBOL
UNIT
℃/W
℃/W
R
θJ-C
Thermal Resistance
Thermal Resistance
2.0
50
R
θJ-A
Ordering Information (Example)
■
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
UNIT WEIGHT(g)
DELIVERY MODE
Approximate 1.88
50
1000
5000
Tube
MUR2020CT
Characteristics (Typical)
■
FIG1:Io -Tc Curve
FIG2:Surge Forward Current Capability
28.0
24.0
20.0
140
120
100
8.3ms Single
Half Sine-Wave
JEDEC Method
16.0
12.0
8.0
TC measure point
80
60
40
4.0
0
20
150
100
200
50
0
1
2
5
10
20
50
100
Case Temperature(℃)
Number of Cycles
2 / 5
S-B1578
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.4,28-Oct-22