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MUR20005CTR PDF预览

MUR20005CTR

更新时间: 2024-11-18 12:24:39
品牌 Logo 应用领域
NAINA 二极管局域网超快速恢复二极管
页数 文件大小 规格书
2页 139K
描述
Super Fast Recovery Diode, 200A

MUR20005CTR 数据手册

 浏览型号MUR20005CTR的Datasheet PDF文件第2页 
MUR20005CT thru  
MUR20020CTR  
Naina Semiconductor Ltd.  
Super Fast Recovery Diode, 200A  
Features  
Dual Diode Construction  
Low Leakage Current  
Low forward voltage drop  
High surge current capability  
Super Fast Switching  
TWIN TOWER PACKAGE  
Maximum Ratings (TJ = 25oC unless otherwise specified)  
Parameter  
Symbol Conditions MUR20005CT(R) MUR20010CT(R) MUR20020CT(R) Units  
Repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
V
RMS reverse voltage  
DC blocking voltage  
Average forward current  
VRMS  
VDC  
35  
50  
70  
140  
200  
200  
V
V
A
100  
200  
IF(AV)  
TC ≤ 140 oC  
TC = 25 oC  
200  
Non-repetitive forward surge  
current, half sine-wave  
IFSM  
800  
800  
800  
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)  
Parameter  
Symbol Conditions MUR20005CT(R) MUR20010CT(R) MUR20020CT(R) Units  
IF = 50 A  
DC forward voltage  
VF  
1.3  
25  
1
1.3  
25  
1
1.3  
25  
1
V
TJ = 25 oC  
VR = 50 V  
TJ = 25 oC  
µA  
mA  
DC reverse current  
IR  
VR = 50 V  
TJ = 125oC  
IF = 0.5A  
IR = 1.0A  
IRR = 0.25A  
Maximum Reverse Recovery  
Time  
trr  
75  
75  
75  
nS  
Thermal Characteristics (TJ = 25oC unless otherwise specified)  
Parameter  
Symbol  
MUR20005CT(R) MUR20010CT(R) MUR20020CT(R) Units  
Thermal resistance  
junction to case  
RthJ-C  
1.0  
1.0  
1.0  
oC/W  
oC  
Operating, storage  
temperature range  
- 40 to +175  
- 40 to +175  
- 40 to +175  
TJ , Tstg  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
Fax: 0120-4273653  
sales@nainasemi.com  
www.nainasemi.com  

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