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MUR1640DT PDF预览

MUR1640DT

更新时间: 2024-11-23 12:56:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 325K
描述
16 Ampere Heatsink Doubler Polarity Fast Recovery Half Bridge Rectifiers

MUR1640DT 数据手册

 浏览型号MUR1640DT的Datasheet PDF文件第2页 
MUR1620DT thru MUR1660DT  
®
MUR1620DT/MUR1640DT/MUR1660DT  
Pb Free Plating Product  
16 Ampere Heatsink Doubler Polarity Fast Recovery Half Bridge Rectifiers  
TO-220AB  
Unit : inch (mm)  
Features  
.419(10.66)  
.196(5.00)  
.387(9.85)  
Latest GPP technology with super fast recovery time  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS,Motor Control and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
Case  
Doubler  
Negative  
Series  
Tandem Polarity Tandem Polarity  
Suffix "ST" Suffix "DT"  
Positive  
Common Cathode Common Anode  
Suffix "CT" Suffix "AT"  
Weight: 2.2 gram approximately  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25o  
ambient temperature unless otherwise specified.  
C
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MUR1620DT MUR1640DT MUR1660DT  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
Current T  
C
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
uA  
uA  
nS  
5.0  
100  
I
R
J
=125oC  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
C
J
o
R
JC  
2.2  
C/W  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Rev.05  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  

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