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MUR1100 PDF预览

MUR1100

更新时间: 2024-01-19 16:49:09
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管功效
页数 文件大小 规格书
2页 59K
描述
HIGH EFFICIENCY RECTIFIER

MUR1100 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.14
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MUR1100 数据手册

 浏览型号MUR1100的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
MUR170 --- MUR1100  
BL  
VOLTAGE RANGE: 700---1000 V  
CURRENT: 1.0 A  
HIGH EFFICIENCY RECTIFIER  
FEATURES  
Low cost  
DO - 41  
Diffused junction  
Low leakage  
Low forward voltage drop  
High crrent capability  
Easily cleaned with Freon,Alcohol, lsopropand  
and similar solvents  
MECHANICAL DATA  
Case: JEDEC DO-41, molded plastic  
Terminals: Axial leads,solderable per MIL-STD  
-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.012 ounces, 0.34grams  
Mounting: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
MUR170 MUR180  
MUR190 MUR1100 UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
700  
490  
700  
800  
560  
800  
V
V
V
VRRM  
VRMS  
VDC  
900  
630  
900  
1000  
700  
Maximum DC blocking voltage  
1000  
Maximum average forw ard rectified current  
9.5mm lead length, @TA=75  
A
1.0  
IF(AV)  
Peak forw ard surge current  
10ms single half-sine-w ave  
30.0  
A
V
IFSM  
superimposed on rated load  
@TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.0A  
1.7  
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
A
at rated DC blocking voltage @TA=100  
100.0  
75  
Maximum reverse recovery time  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
trr  
ns  
pF  
(Note2)  
(Note3)  
15  
CJ  
60  
/W  
Rθ  
JA  
Operating junction temperature range  
- 55 ----- + 150  
- 55 ----- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MH and applied rev erse v oltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
www.galaxycn.com  
Z
BLGALAXY ELECTRICAL  
1.  
Document Number 0262021  

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