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MUR105-160 PDF预览

MUR105-160

更新时间: 2024-11-19 01:24:03
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永而佳 - WINNERJOIN /
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2页 113K
描述
Diode

MUR105-160 数据手册

 浏览型号MUR105-160的Datasheet PDF文件第2页 
RoHS  
MUR105-MUR160  
FEATURES  
Super fast switching speed.  
Low leakage.  
VOLTAGE RANGE  
CURRENT  
1250 to 1300 Volts  
1.0 Ampere  
Low forward voltage.  
High current capability.  
High surge capability.  
DO-41  
.034(0.9)  
DIA.  
.028(0.7)  
High temperature soldering guaranteed:  
260oC/10 seconds/0.375"(9.5mm)lead length  
at 5 lbs (2,3kg) tension  
1.0(25.4)  
MIN  
MECHANICAL DATA  
Case:Transfer molded plastic  
Epoxy:UL94V-0 rate flame retardant  
Polarity:Color band denotes cathode end  
Lead:Plated axial lead ,solderable per MIL-STD-202E  
method 208C  
.205(5.2)  
.165(4.2)  
.107(2.7)  
DIA  
.080(2.0)  
1.0(25.4)  
MIN  
Mounting position:Any  
Weight:0.041 ounce,0.39 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load derate current by 20%.  
Dimensions in inches and (millimeters)  
MUR105 MUR110 MUR115 MUR120 MUR140 MUR160  
SYMBOLS  
UNITS  
Maximum Repetitive Peak Reverse Voltage  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
50  
35  
50  
100  
70  
150 200  
105 140  
150 200  
300  
210  
300  
400  
280  
400  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
V
DC  
100  
Maximum Average Forward Rectified Current  
0.375(9.5mm)Lead length at T  
=55oC  
A
Amps  
1.0  
I
(AV)  
FSM  
Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
I
35  
Maximum Instantaneous Forward Voltage Drop  
0.95  
1.25  
Volts  
V
F
at 1.0A  
T
T
A
A
=25oC  
=125oC  
5.0  
50  
Maximum DC Reverse Current at rated  
DC blocking voltage per element  
I
t
R
A
rr  
35  
nS  
pF  
Maximum Reverse Recovery Time(NOTE 1)  
Typical Junction Capacitance(NOTE2)  
Typical Thermal Resistance(NOTE3).  
20  
C
J
30  
R
JA  
40  
OC/W  
O
WEJ ELECTRONIC CO.,LTD  
Operating and Storage Temperature Range  
T
J
,TSTG  
-65 to +150  
C
NOTES:  
1.Test condition:I  
F
=0.5A,I =1.0A.IRR=0.25A.  
R
2.Measured at 1MHz and applied reverse of 4.0volts.  
3.Thermal resistance from junction to ambient with 0.375(9.5mm) lead length,P.C.B.mounted.  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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