Datasheet > MUR10020CT

MUR10020CT

更新时间： 2024-12-01 12:24:35

品牌	Logo	应用领域
NAINA		二极管局域网超快速恢复二极管
页数	文件大小	规格书
2页	138K
描述
Super Fast Recovery Diode, 100A

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中文翻译

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数据手册

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MUR10020CT 数据手册

MUR10005CT thru

MUR10020CTR

Naina Semiconductor Ltd.

Super Fast Recovery Diode, 100A

Features

•

Dual Diode Construction

Low Leakage Current

Low forward voltage drop

High surge current capability

Super Fast Switching

TWIN TOWER PACKAGE

Maximum Ratings (T_J= 25^oC unless otherwise specified)

Parameter

Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Units

Repetitive peak reverse

voltage

V_RRM

100

200

RMS reverse voltage

DC blocking voltage

Average forward current

V_RMS

V_DC

140

200

100

I_F(AV)

T_C≤ 140 ^oC

T_C= 25 ^oC

100

Non-repetitive forward surge

current, half sine-wave

I_FSM

400

Electrical Characteristics (T_J= 25^oC unless otherwise specified)

Parameter

Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Units

I_F= 50 A

DC forward voltage

V_F

1.3

T_J= 25 ^oC

V_R= 50 V

T_J= 25 ^oC

µA

DC reverse current

I_R

V_R= 50 V

T_J= 125^oC

I_F= 0.5A

I_R= 1.0A

I_RR= 0.25A

Maximum Reverse Recovery

Time

t_rr

Thermal Characteristics (T_J= 25^oC unless otherwise specified)

Parameter

Symbol

MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Units

Thermal resistance

junction to case

R_thJ-C

1.0

^oC/W

^oC

Operating, storage

temperature range

- 40 to +175

T_J, T_stg

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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