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MUN5112T1G PDF预览

MUN5112T1G

更新时间： 2024-11-23 22:45:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
12页 136K
描述
Bias Resistor Transistor

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中文翻译

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MUN5112T1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：4 weeks
风险等级：0.95其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：0.31 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MUN5112T1G 数据手册

 浏览型号MUN5112T1G的Datasheet PDF文件第2页浏览型号MUN5112T1G的Datasheet PDF文件第3页浏览型号MUN5112T1G的Datasheet PDF文件第4页浏览型号MUN5112T1G的Datasheet PDF文件第5页浏览型号MUN5112T1G的Datasheet PDF文件第6页浏览型号MUN5112T1G的Datasheet PDF文件第7页 
MUN5111T1 Series  
Preferred Devices  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space. The device is housed in  
the SC−70/SOT−323 package which is designed for low power  
surface mount applications.  
http://onsemi.com  
PNP SILICON  
BIAS RESISTOR  
TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 1  
BASE  
(INPUT)  
• Pb−Free Packages are Available  
• Simplifies Circuit Design  
• Reduces Board Space  
R
R
1
2
PIN 2  
EMITTER  
(GROUND)  
• Reduces Component Count  
• The SC−70/SOT−323 package can be soldered using wave or reflow.  
The modified gull−winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
3
• Available in 8 mm embossed tape and reel − Use the Device Number  
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the  
Device Number to order the 13 inch/10,000 unit reel.  
1
2
SC−70/SOT−323  
CASE 419  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
STYLE 3  
V
CBO  
CEO  
V
50  
Vdc  
MARKING DIAGRAM  
I
C
100  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
6x  
M
6x  
M
= Specific Device Code  
(See Order Info Table)  
= Date Code  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
202 (Note 1)  
310 (Note 2)  
1.6 (Note 1)  
2.5 (Note 2)  
mW  
T = 25°C  
A
ORDERING INFORMATION  
Derate above 25°C  
°C/W  
See specific ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Thermal Resistance, Junction-to-Ambient  
R
618 (Note 1) °C/W  
q
JA  
403 (Note 2)  
Thermal Resistance, Junction-to-Lead  
Junction and Storage Temperature Range  
R
280 (Note 1) °C/W  
332 (Note 2)  
q
JL  
Preferred devices are recommended choices for future use  
and best overall value.  
T , T  
J
−55 to +150  
°C  
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
October, 2004 − Rev. 7  
MUN5111T1/D  
 
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中文翻译

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MUN5112T1G 替代型号

型号 品牌 替代类型 描述 数据表
MUN5112T1 ONSEMI

完全替代

 Bias Resistor Transistor
MUN5112DW1T1G ONSEMI

功能相似

 Dual Bias Resistor Transistors

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