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MUN2111T1/D

更新时间： 2024-01-01 01:39:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
16页 144K
描述
Bias Resistor Transistors

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中文翻译

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MUN2111T1/D 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-59包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.85其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：35
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MUN2111T1/D 数据手册

 浏览型号MUN2111T1/D的Datasheet PDF文件第2页浏览型号MUN2111T1/D的Datasheet PDF文件第3页浏览型号MUN2111T1/D的Datasheet PDF文件第4页浏览型号MUN2111T1/D的Datasheet PDF文件第5页浏览型号MUN2111T1/D的Datasheet PDF文件第6页浏览型号MUN2111T1/D的Datasheet PDF文件第7页 
MUN2111T1 Series  
Preferred Devices  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the SC–59  
package which is designed for low power surface mount applications.  
http://onsemi.com  
PIN 3  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 2  
BASE  
(INPUT)  
• Simplifies Circuit Design  
• Reduces Board Space  
PIN 1  
EMITTER  
• Reduces Component Count  
• Moisture Sensitivity Level: 1  
(GROUND)  
• ESD Rating – Human Body Model: Class 1  
3
ESD Rating – Machine Model: Class B  
• The SC–59 package can be soldered using wave or reflow.  
The modified gull–winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
2
1
SC–59  
CASE 318D  
PLASTIC  
• Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
6x  
V
CBO  
CEO  
V
50  
Vdc  
6x = Device Code  
I
C
100  
mAdc  
x
= A – T*  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Total Device Dissipation  
P
230 (Note 1.)  
338 (Note 2.)  
1.8 (Note 1.)  
2.7 (Note 2.)  
mW  
D
T = 25°C  
A
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
DEVICE MARKING INFORMATION  
*See device marking table on page 2 of this data sheet.  
Thermal Resistance –  
Junction-to-Ambient  
R
540 (Note 1.)  
370 (Note 2.)  
θ
JA  
JL  
Preferred devices are recommended choices for future use  
and best overall value.  
Thermal Resistance –  
Junction-to-Lead  
R
264 (Note 1.)  
287 (Note 2.)  
θ
Junction and Storage  
Temperature Range  
T , T  
J
–55 to +150  
stg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2001  
Publication Order Number:  
March, 2001 – Rev. 11  
MUN2111T1/D  
1234567...16

中文翻译

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