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MUN2112T1 PDF预览

MUN2112T1

更新时间： 2024-01-12 19:16:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
12页 160K
描述
Bias Resistor Transistor

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中文翻译

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MUN2112T1 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SC-59包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.29Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.338 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MUN2112T1 数据手册

 浏览型号MUN2112T1的Datasheet PDF文件第2页浏览型号MUN2112T1的Datasheet PDF文件第3页浏览型号MUN2112T1的Datasheet PDF文件第4页浏览型号MUN2112T1的Datasheet PDF文件第5页浏览型号MUN2112T1的Datasheet PDF文件第6页浏览型号MUN2112T1的Datasheet PDF文件第7页 
MUN2111T1 Series  
Preferred Devices  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The  
Bias Resistor Transistor (BRT) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. The BRT eliminates these  
individual components by integrating them into a single device. The  
use of a BRT can reduce both system cost and board space. The device  
is housed in the SC−59 package which is designed for low power  
surface mount applications.  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Moisture Sensitivity Level: 1  
• ESD Rating − Human Body Model: Class 1  
ESD Rating − Machine Model: Class B  
http://onsemi.com  
PIN 3  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 2  
BASE  
(INPUT)  
PIN 1  
EMITTER  
(GROUND)  
3
• The SC−59 package can be soldered using wave or reflow.  
The modified gull−winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
• Pb−Free Package is Available  
2
1
SC−59  
CASE 318D  
PLASTIC  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
MARKING DIAGRAM  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
50  
Vdc  
6x M  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
6x = Specific Device Code*  
M = Date Code  
Total Device Dissipation  
P
230 (Note 1)  
338 (Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
mW  
D
T = 25°C  
A
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Thermal Resistance −  
Junction−to−Ambient  
R
q
JA  
540 (Note 1)  
370 (Note 2)  
DEVICE MARKING INFORMATION  
*See device marking table on page 2 of this data sheet.  
Thermal Resistance −  
Junction−to−Lead  
R
q
JL  
264 (Note 1)  
287 (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
J
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 x 1.0 inch Pad.  
Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
1
January, 2005 − Rev. 14  
MUN2111T1/D  
 
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中文翻译

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MUN2112T1 替代型号

型号 品牌 替代类型 描述 数据表
MUN2114T3 ONSEMI

功能相似

 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
MUN2112T1G ONSEMI

功能相似

 Bias Resistor Transistor

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