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MUN2114T1 PDF预览

MUN2114T1

更新时间: 2024-01-04 05:34:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
10页 240K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

MUN2114T1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.58Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.338 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MUN2114T1 数据手册

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Order this document  
by MUN2111T1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base–emitter resistor. The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC–59 package which is designed  
for low power surface mount applications.  
PNP SILICON  
BIAS RESISTOR  
TRANSISTOR  
Simplifies Circuit Design  
Reduces Board Space  
PIN3  
COLLECTOR  
(OUTPUT)  
Reduces Component Count  
The SC–59 package can be soldered using wave or reflow.  
The modified gull–winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
3
R1  
R2  
2
1
PIN2  
BASE  
(INPUT)  
Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
PIN1  
EMITTER  
(GROUND)  
CASE 318D–03, STYLE 1  
(SC–59)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
Collector–Emitter Voltage  
Collector Current  
50  
Vdc  
CEO  
I
C
100  
mAdc  
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
*200  
1.6  
mW  
mW/°C  
A
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction–to–Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
625  
°C/W  
°C  
θJA  
T , T  
J
65 to +150  
stg  
Maximum Temperature for Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MUN2111T1  
MUN2112T1  
MUN2113T1  
MUN2114T1  
MUN2115T1  
6A  
6B  
6C  
6D  
6E  
6F  
6G  
6H  
6J  
10  
22  
47  
10  
10  
10  
22  
47  
47  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
MUN2116T1  
MUN2130T1  
MUN2131T1  
MUN2132T1  
MUN2133T1  
MUN2134T1  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
1.0  
2.2  
4.7  
47  
47  
6K  
6L  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 5  
Motorola, Inc. 1996  

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