生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.69 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.028 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP50N05EA16A | MOTOROLA |
获取价格 |
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP50N05EAF | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
MTP50N05EAJ | MOTOROLA |
获取价格 |
50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP50N05ED1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
MTP50N05EN | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
MTP50N05ES | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
MTP50N05ET | MOTOROLA |
获取价格 |
50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP50N05EUA | MOTOROLA |
获取价格 |
50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP50N05EW | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
MTP50N05EWC | MOTOROLA |
获取价格 |
50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |