MTP4N40ET

更新时间： 2024-01-02 16:01:05

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摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

4.0 AMPERES

400 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 1.8 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

400

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

400

Gate–to–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

4.0

3.0

Adc

Apk

Total Power Dissipation

Derate above 25°C

0.59

Watts

W/°C

Operating and Storage Temperature Range

T , T

J stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V = 10 Vdc, Peak I = 4.0 Apk, L = 25 mH, R = 25 Ω)

GS L G

200

Thermal Resistance — Junction to Case

— Junction to Ambient

1.7

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
MTP4N40EU2	MOTOROLA	获取价格	4A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N40EUA	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP4N40EW	MOTOROLA	获取价格	4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N40EWC	MOTOROLA	获取价格	暂无描述
MTP4N45	NJSEMI	获取价格	N-Channel Power MOSFETs, 4.5 A, 450 V/500 V
MTP4N45	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 4.5 A, 450V/500V
MTP4N45	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
MTP4N45M	NJSEMI	获取价格	Trans MOSFET N-CH 450V 4A
MTP4N4S	NJSEMI	获取价格	N-Channel Power MOSFETs, 4.5 A, 450 V/500 V
MTP4N50	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 4.5 A, 450V/500V

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