MTP4N50E

更新时间： 2024-09-30 22:45:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	257K
描述
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

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MTP4N50E 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.18
其他特性：	AVALANCHE RATED	雪崩能效等级（Eas）：	280 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V	最大漏极电流 (Abs) (ID)：	4 A
最大漏极电流 (ID)：	4 A	最大漏源导通电阻：	1.5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	75 W	最大脉冲漏极电流 (IDM)：	10 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MTP4N50E 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

4.0 AMPERES

500 VOLTS

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

= 1.5 OHMS

DS(on)

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the

Avalanche Mode

•

Source–to–Drain Diode Recovery Time Comparable to Discrete

Fast Recovery Diode

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

500

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

500

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–repetitive

±20

±40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Pulsed

4.0

Adc

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.6

Watts

W/°C

Operating and Storage Temperature Range

T , T

–55 to 150

°C

stg

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)

Single Pulse Drain–to–Source Avalanche Energy — T = 25°C

(1)

(2)

280

7.4

DSR

Single Pulse Drain–to–Source Avalanche Energy — T = 100°C

Repetitive Pulse Drain–to–Source Avalanche Energy

DSR

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient°

1.67

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

(1) V

= 50 V, I = 4.0 A

(2) Pulse Width and frequency is limited by T (max) and thermal response

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTP4N50E相关器件

型号	品牌	获取价格	描述	数据表
MTP4N50E16	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
MTP4N50EA	MOTOROLA	获取价格	4A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N50EA16A	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
MTP4N50EAF	MOTOROLA	获取价格	4A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N50EAJ	MOTOROLA	获取价格	4A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N50EC	MOTOROLA	获取价格	暂无描述
MTP4N50ED1	MOTOROLA	获取价格	4A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N50EL	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
MTP4N50ET	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
MTP4N50EU	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal

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