生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.35 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 100 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP12N20U | MOTOROLA |
获取价格 |
12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12N20U2 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Met | |
MTP12N20UA | MOTOROLA |
获取价格 |
12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12N20W | MOTOROLA |
获取价格 |
12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12N20WC | MOTOROLA |
获取价格 |
12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12P05 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal | |
MTP12P05 | NJSEMI |
获取价格 |
Power Field Effect Transistor | |
MTP12P06 | MOTOROLA |
获取价格 |
POWER FIELD EFFECT TRANSISTOR | |
MTP12P06 | NJSEMI |
获取价格 |
Power Field Effect Transistor | |
MTP12P0616 | MOTOROLA |
获取价格 |
12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |