是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
其他特性: | LEADFORM OPTIONS ARE AVAILABLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 200 pF |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 75 W | 最大脉冲漏极电流 (IDM): | 28 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 200 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP12P06 | MOTOROLA |
获取价格 |
POWER FIELD EFFECT TRANSISTOR | |
MTP12P06 | NJSEMI |
获取价格 |
Power Field Effect Transistor | |
MTP12P0616 | MOTOROLA |
获取价格 |
12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12P06A | MOTOROLA |
获取价格 |
12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12P06A16A | MOTOROLA |
获取价格 |
12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12P06AF | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal | |
MTP12P06C | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal | |
MTP12P06D1 | MOTOROLA |
获取价格 |
12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12P06N | MOTOROLA |
获取价格 |
12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP12P06S | MOTOROLA |
获取价格 |
12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |