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MTP10N10ELG PDF预览

MTP10N10ELG

更新时间： 2024-01-08 17:06:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 107K
描述
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220

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MTP10N10ELG 数据手册

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MTP10N10EL  
Preferred Device  
Power MOSFET  
10 A, 100 V, Logic Level, N−Channel TO−220  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. The energy efficient design also  
offers a drain−to−source diode with a fast recovery time. Designed for  
low voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
10 A, 100 V  
R
DS(on) = 0.22 W  
Features  
N−Channel  
D
• Avalanche Energy Specified  
• Source−to−Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
• Diode is Characterized for Use in Bridge Circuits  
G
• I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
• Pb−Free Package is Available  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
4
4
Drain−to−Source Voltage  
V
DSS  
DGR  
Drain  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
100  
GS  
Gate−to−Source Voltage  
− Continuous  
V
±15  
±20  
Vdc  
Vpk  
GS  
− Non−Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current  
− Continuous @ T = 25°C  
− Continuous @ T = 100°C  
− Single Pulse (t ≤ 10 ms)  
TO−220AB  
CASE 221A  
STYLE 5  
MTP10N10EL  
LLYWW  
I
I
10  
6.0  
35  
Adc  
Apk  
C
D
1
C
D
2
3
I
DM  
p
1
Gate  
3
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
40  
0.32  
1.75  
Watts  
W/°C  
Watts  
C
Source  
Total Power Dissipation @ T = 25°C  
C
2
(Note 1)  
Drain  
Operating and Storage Temperature  
Range  
T , T  
−55 to  
150  
°C  
J
stg  
MTP10N10EL = Device Code  
LL  
Y
= Location Code  
= Year  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy − Starting T = 25°C  
50  
J
WW  
= Work Week  
(V = 25 Vdc, V = 5.0 Vdc, Peak  
DD  
GS  
I = 10 Adc, L = 1.0 mH, R = 25 W)  
L
G
ORDERING INFORMATION  
Thermal Resistance  
− Junction−to−Case°  
− Junction−to−Ambient  
°C/W  
Device  
Package  
Shipping  
R
R
R
3.13  
100  
71.4  
q
JC  
JA  
JA  
q
MTP10N10EL  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
− Junction−to−Ambient (Note 1)  
q
MTP10N10ELG  
TO−220AB  
(Pb−Free)  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 secs  
T
260  
°C  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
March, 2005 − Rev. 4  
MTP10N10EL/D  
 
12345678

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MTP10N10ELG 替代型号

型号 品牌 替代类型 描述 数据表
MTP10N10EL ONSEMI

类似代替

 Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
MTP10N10EL MOTOROLA

功能相似

 TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

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