Datasheet > MTP1013S3

MTP1013S3

更新时间： 2022-03-20 22:24:28

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	307K
描述
-20V P-CHANNEL Enhancement Mode MOSFET

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数据手册

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MTP1013S3 数据手册

Spec. No. : C698S3

Issued Date : 2012.07.13

Revised Date : 2013.09.09

Page No. : 1/ 8

CYStech Electronics Corp.

-20V P-CHANNEL Enhancement Mode MOSFET

BVDSS

-20V

-540mA

0.64Ω(typ)

0.68Ω(typ)

1.1Ω(typ)

1.9Ω(typ)

MTP1013S3

RDSON@VGS=-4.5V, ID=-430mA

RDSON@VGS=-4V, ID=-300mA

RDSON@VGS=-2.5V, ID=-300mA

RDSON@VGS=-1.8V, ID=-150mA

Features

• Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th)<1.2V.

• Compact industrial standard SOT-323 surface mount package.

• Pb-free package.

Equivalent Circuit

Outline

MTP1013S3

SOT-323

G：Gate

S：Source

D：Drain

Ordering Information

Device

Package

Shipping

SOT-23

MTP1013S3-0-T1-G

3000 pcs / Tape & Reel

(Pb-free lead plating and halogen-free package)

MTP1013S3

CYStek Product Specification

12 3 4 5 6 7 8

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