Datasheet > MTP1067N3

MTP1067N3

更新时间： 2024-01-07 08:14:25

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	459K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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MTP1067N3 数据手册

Spec. No. : C962N3

Issued Date : 2017.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

-20V P-Channel Enhancement Mode MOSFET

BVDSS

ID @ VGS=-10V, T =25°C

RDSON@VGS=-4.5V, ID=-1A

RDSON@VGS=-2.5V, ID=-1A

-20V

-1.4A

MTP1067N3

102mΩ(typ)

138mΩ(typ)

Features

• Compact and low profile SOT-23 package

• Advanced trench process technology

• High density cell design for ultra low on resistance

• Pb-free lead plating package

Symbol

Outline

SOT-23

MTP1067N3

G：Gate

S：Source

D：Drain

Ordering Information

Device

Package

Shipping

SOT-23

MTP1067N3-0-T1-G

3000 pcs / tape & reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

MTP1067N3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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