是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.91 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 10 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF520N | INFINEON |
功能相似 |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) | |
BUZ72 | INFINEON |
功能相似 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ20 | INFINEON |
功能相似 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP10N10E | MOTOROLA |
获取价格 |
TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM | |
MTP10N10E | NJSEMI |
获取价格 |
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220 Rail | |
MTP10N10E16 | MOTOROLA |
获取价格 |
10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP10N10EA16A | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP10N10EAF | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP10N10EC | MOTOROLA |
获取价格 |
10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP10N10ED1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP10N10EL | MOTOROLA |
获取价格 |
TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS | |
MTP10N10EL | ONSEMI |
获取价格 |
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 | |
MTP10N10ELG | ONSEMI |
获取价格 |
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 |