MTD10N10EL

更新时间： 2024-01-26 01:02:05

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	97K
描述
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount

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MTD10N10EL 数据手册

MTD10N10EL

TMOS E−FET

Power Field Effect Transistor

DPAK for Surface Mount

N−Channel Enhancement−Mode Silicon

Gate

http://onsemi.com

This advanced TMOS E−FET is designed to withstand high energy

in the avalanche and commutation modes. The new energy efficient

design also offers a drain−to−source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

TYP

DS(ON)

I MAX

DSS

100 V

0.22 Ω

10 A

N−Channel

Features

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Surface Mount Package Available in 16 mm, 13−inch/2500

MARKING DIAGRAM

& PIN ASSIGNMENTS

Unit Tape & Reel, Add T4 Suffix to Part Number

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Drain

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

Vdc

100

DSS

DGR

DPAK

Drain−to−Gate Voltage (R = 1.0 MΩ)

CASE 369C

(Surface Mount)

Style 2

Gate−to−Source Voltage — Continuous

±15

±20

Vdc

Vpk

— Non−Repetitive (t ≤ 10 ms)

GSM

Drain

Gate

Source

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

6.0

Adc

Apk

10N10EL=Device Code

= Year

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.32

1.75

Watts

W/°C

Watts

= Work Week

Total Power Dissipation @ T = 25°C (Note 2)

ORDERING INFORMATION

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

T , T

−55 to

150

°C

stg

†

Device

Package

DPAK

Shipping

MTD10N10EL

75 Units/Rail

2500 Tape & Reel

Energy — Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc, I = 10 Apk,

MTD10N10ELT4

DPAK

L = 1.0 mH, R =25 Ω)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Thermal Resistance — Junction to Case

— Junction to Ambient (Note 1)

— Junction to Ambient (Note 2)

3.13

100

71.4

°C/W

°C

Maximum Temperature for Soldering

260

Purposes, 1/8″ from case for 10 seconds

1. When surface mounted to an FR4 board using minimum recommended pad size.

2. When surface mounted to an FR4 board using 0.5 sq in pad size.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 1

MTD10N10EL/D

12 3 4 5 6 7 8

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