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MTB75N05HDT4G PDF预览

MTB75N05HDT4G

更新时间: 2024-02-09 04:51:56
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安森美 - ONSEMI /
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MTB75N05HDT4G 数据手册

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MTB75N05HD  
SAFE OPERATING AREA  
The Forward Biased Safe Operating Area curves define  
reliable operation, the stored energy from circuit inductance  
dissipated in the transistor while in avalanche must be less  
than the rated limit and must be adjusted for operating  
conditions differing from those specified. Although industry  
practice is to rate in terms of energy, avalanche energy  
capability is not a constant. The energy rating decreases  
non–linearly with an increase of peak current in avalanche  
and peak junction temperature.  
the maximum simultaneous drain–to–source voltage and  
drain current that a transistor can handle safely when it is  
forward biased. Curves are based upon maximum peak  
junction temperature and a case temperature (T ) of 25°C.  
C
Peak repetitive pulsed power limits are determined by using  
the thermal response data in conjunction with the procedures  
discussed in AN569, “Transient Thermal Resistance –  
General Data and Its Use.”  
Although many E–FETs can withstand the stress of  
drain–to–source avalanche at currents up to rated pulsed  
Switching between the off–state and the on–state may  
traverse any load line provided neither rated peak current  
current (I  
), the energy rating is specified at rated  
DM  
(I  
) nor rated voltage (V  
) is exceeded, and that the  
continuous current (I ), in accordance with industry  
DM  
DSS  
D
transition time (t , t ) does not exceed 10 µs. In addition the  
custom. The energy rating must be derated for temperature  
as shown in the accompanying graph (Figure 12). Maximum  
r f  
total power averaged over a complete switching cycle must  
not exceed (T  
– T )/(R  
).  
energy at currents below rated continuous I can safely be  
assumed to equal the values indicated.  
J(MAX)  
C
θJC  
D
A power MOSFET designated E–FET can be safely used  
in switching circuits with unclamped inductive loads. For  
1000  
500  
V
= 20 V  
GS  
SINGLE PULSE  
= 25°C  
I = 75 A  
D
450  
400  
350  
300  
250  
200  
150  
100  
10 µs  
T
C
100  
10  
100 µs  
1 ms  
10 ms  
dc  
1
R
LIMIT  
DS(on)  
THERMAL LIMIT  
PACKAGE LIMIT  
50  
0
0.1  
0.1  
1
10  
100  
25  
50  
75  
100  
125  
150  
175  
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
T , STARTING JUNCTION TEMPERATURE (°C)  
J
Figure 12. Maximum Rated Forward Biased  
Safe Operating Area  
Figure 13. Maximum Avalanche Energy versus  
Starting Junction Temperature  
1
D = 0.5  
0.2  
P
R
R
(t) = r(t) R  
θJC  
= 1.0°C/W MAX  
0.1  
(pk)  
θJC  
θJC  
0.1  
0.05  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
0.02  
t
1
READ TIME AT t  
1
t
2
0.01  
T
- T = P  
C
R
(t)  
J(pk)  
(pk) θJC  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
1.0E-Ă05  
1.0E-Ă04  
1.0E-Ă03  
1.0E-Ă02  
1.0E-Ă01  
1.0E+00  
1.0E+01  
t, TIME (s)  
Figure 14. Thermal Response  
http://onsemi.com  
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