Datasheet > MTB75N05HDT4

MTB75N05HDT4

更新时间： 2024-02-20 08:27:56

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体管
页数	文件大小	规格书
8页	179K
描述
Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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MTB75N05HDT4 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.95
风险等级：	5.14	外壳连接：	DRAIN
配置：	SINGLE	最小漏源击穿电压：	50 V
最大漏极电流 (Abs) (ID)：	75 A	最大漏极电流 (ID)：	75 A
最大漏源导通电阻：	0.0095 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	125 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

MTB75N05HDT4 数据手册

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141,

P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488

Customer Focus Center: 1–800–521–6274

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,

Motorola Fax Back System

– US & Canada ONLY 1–800–774–1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

– http://sps.motorola.com/mfax/

852–26668334

HOME PAGE: http://motorola.com/sps/

MTB75N05HD/D

◊

Motorola TMOS Power MOSFET Transistor Device Data

1...5 6 78

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