Datasheet > MTB5D0C03J4

MTB5D0C03J4

更新时间： 2022-02-26 14:03:30

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
13页	812K
描述
N & P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTB5D0C03J4 数据手册

Spec. No. : C704J4

Issued Date : 2016.06.02

Revised Date : 2016.06.03

Page No. : 1/13

CYStech Electronics Corp.

N & P-Channel Enhancement Mode Power MOSFET

N-CH

30V

8.6A

P-CH

-30V

-6.8A

MTB5D0C03J4

BVDSS

ID @ VGS=10V(-10V), TA=25°C

ID @ VGS=10V(-10V), TC=25°C

33.5A

-26.5A

RDSON(typ.) @VGS=(-)10V

RDSON(typ.) @VGS=(-)4.5V

Features

 Low Gate Charge

6.7 mΩ 13.4 mΩ

8.3 mΩ 20.1 mΩ

 Simple Drive Requirement

 RoHS compliant & Halogen-free package

Equivalent Circuit

Outline

TO-252-4L

MTB5D0C03J4

Tab D1/D2

G：Gate D：Drain

S：Source

Absolute Maximum Ratings (TA=25C, unless otherwise noted)

Limits

N-channel P-channel

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

-30

±20

33.5

21.2

8.6

-26.5

-16.8

-6.8

Continuous Drain Current @ TC=25C, VGS=10V(-10V) (Note1)

Continuous Drain Current @ TC=100C, VGS=10V(-10V) (Note1)

Continuous Drain Current @ TA=25C, VGS=10V(-10V) (Note4)

Continuous Drain Current @ TA=70C, VGS=10V(-10V) (Note4)

6.9

-5.4

Pulsed Drain Current *1

(Note3)

IDM

IAS

EAS

134

33.5

128

-106

-26.5

128

Single Pulse Avalanche Current @ L=0.1mH

Single Pulse Avalanche Energy @L=1mH

Total Power Dissipation (TC=25℃)

Total Power Dissipation (TC=100℃)

Total Power Dissipation (TA=25℃)

Total Power Dissipation (TA=70℃)

Operating Junction and Storage Temperature Range

(Note5)

(Note1)

(Note2)

2.4

1.7

PDSM

Tj, Tstg

-55~+150

C

MTB5D0C03J4

CYStek Product Specification

12 3 4 5 6 7...13

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