Datasheet > MTB5K5N40KA3-0-BK-G

MTB5K5N40KA3-0-BK-G

更新时间： 2022-02-26 12:23:07

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	430K
描述
N-Channel Enhancement Mode MOSFET

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MTB5K5N40KA3-0-BK-G 数据手册

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Spec. No. : C066A3

Issued Date : 2017.02.15

Revised Date :

CYStech Electronics Corp.

Page No. : 1/8

N-Channel Enhancement Mode MOSFET

MTB5K5N40KA3

BVDSS

400V

250mA

ID@VGS=10V, TA=25°C

RDSON @VGS=10V, ID=0.1A

RDSON @VGS=4.5V, ID=0.1A

Features

4.2Ω(typ.)

• Low on-resistance

• High ESD capability, ≥ 4kV (HBM)

• High speed switching

• Easily designed drive circuits

• Easy to use in parallel

• Pb-free lead plating and halogen-free package

Symbol

Outline

TO-92

MTB5K5N40KA3

G：Gate

S：Source

D：Drain

G D S

Ordering Information

Device

Package

Shipping

MTB5K5N40KA3-0-TB-G

2000 pcs / Tape & Box

TO-92

1000 pcs/ bag, 10 bags/box,

10boxes/carton

(Pb-free lead plating and halogen-free package)

MTB5K5N40KA3-0-BK-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton

Product rank, zero for no rank products

Product name

MTB5K5N40KA3

CYStek Product Specification

12 3 4 5 6 7 8

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