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MTB50P03HDLT4G

更新时间： 2024-11-19 05:50:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 91K
描述
Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK

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MTB50P03HDLT4G 数据手册

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MTB50P03HDL  
Preferred Device  
Power MOSFET  
50 Amps, 30 Volts, Logic Level  
P−Channel D2PAK  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. The energy efficient design also  
offers a drain−to−source diode with a fast recovery time. Designed for  
low voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
50 AMPERES  
30 VOLTS  
RDS(on) = 25 mW  
Features  
P−Channel  
• Avalanche Energy Specified  
• Source−to−Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
D
• Diode is Characterized for Use in Bridge Circuits  
G
• I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
• Short Heatsink Tab Manufactured − Not Sheared  
• Specially Designed Leadframe for Maximum Power Dissipation  
• Pb−Free Packages are Available  
S
4
2
D PAK  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
CASE 418B  
STYLE 2  
Rating  
Drain−Source Voltage  
Symbol Value Unit  
2
3
1
V
30  
30  
Vdc  
Vdc  
DSS  
Drain−Gate Voltage (R = 1.0 MW)  
V
V
GS  
DGR  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Gate−Source Voltage  
− Continuous  
V
15  
20  
Vdc  
Vpk  
GS  
− Non−Repetitive (t ≤ 10 ms)  
p
GSM  
4
Drain Current − Continuous  
Drain Current − Continuous @ 100°C  
Drain Current − Single Pulse (t ≤ 10 ms)  
I
I
50  
31  
150  
Adc  
Apk  
Drain  
D
D
I
p
DM  
M
TB  
Total Power Dissipation  
P
125  
1.0  
2.5  
W
W/°C  
W
D
Derate above 25°C  
50P03HG  
AYWW  
Total Power Dissipation @ T = 25°C, when  
C
mounted with the minimum recommended pad size  
Operating and Storage Temperature Range  
T , T  
− 55 to  
150  
°C  
J
stg  
2
Drain  
1
3
Single Pulse Drain−to−Source Avalanche  
E
1250  
mJ  
AS  
Energy − Starting T = 25°C  
Gate  
Source  
J
(V = 25 Vdc, V = 5.0 Vdc, Peak  
DD  
GS  
I = 50 Apk, L = 1.0 mH, R = 25 W)  
L
G
MTB50P03H = Device Code  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient  
− Junction−to−Ambient, when mounted with the  
minimum recommended pad size  
°C/W  
R
R
R
1.0  
62.5  
50  
q
JC  
JA  
JA  
q
q
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
°C  
ORDERING INFORMATION  
L
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 6  
MTB50P03HDL/D  
1234567...9

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MTB50P03HDLT4G 替代型号

型号 品牌 替代类型 描述 数据表
MTB50P03HDLT4 ONSEMI

类似代替

 Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50P03HDLG ONSEMI

类似代替

 Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50P03HDL ONSEMI

类似代替

 Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK

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