Datasheet > MTB50P03HDL

MTB50P03HDL

更新时间： 2024-11-19 05:50:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	91K
描述
Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MTB50P03HDL 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	CASE 418B-04, D2PAK-3	针数：	3
Reach Compliance Code：	not_compliant	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.2
其他特性：	AVALANCHE RATED	雪崩能效等级（Eas）：	1250 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	50 A
最大漏极电流 (ID)：	50 A	最大漏源导通电阻：	0.025 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	240
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.75 W
最大脉冲漏极电流 (IDM)：	150 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MTB50P03HDL 数据手册

MTB50P03HDL

Preferred Device

Power MOSFET

50 Amps, 30 Volts, Logic Level

P−Channel D²PAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain−to−source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

50 AMPERES

30 VOLTS

R_DS(on)= 25 mW

Features

P−Channel

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Short Heatsink Tab Manufactured − Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Pb−Free Packages are Available

D PAK

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

CASE 418B

STYLE 2

Rating

Drain−Source Voltage

Symbol Value Unit

Vdc

DSS

Drain−Gate Voltage (R = 1.0 MW)

DGR

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate−Source Voltage

− Continuous

Vdc

Vpk

− Non−Repetitive (t ≤ 10 ms)

GSM

Drain Current − Continuous

Drain Current − Continuous @ 100°C

Drain Current − Single Pulse (t ≤ 10 ms)

150

Adc

Apk

Drain

Total Power Dissipation

125

1.0

2.5

W/°C

Derate above 25°C

50P03HG

AYWW

Total Power Dissipation @ T = 25°C, when

mounted with the minimum recommended pad size

Operating and Storage Temperature Range

T , T

− 55 to

150

°C

stg

Drain

Single Pulse Drain−to−Source Avalanche

1250

Energy − Starting T = 25°C

Gate

Source

(V = 25 Vdc, V = 5.0 Vdc, Peak

I = 50 Apk, L = 1.0 mH, R = 25 W)

MTB50P03H = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient, when mounted with the

minimum recommended pad size

°C/W

1.0

62.5

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

June, 2006 − Rev. 6

MTB50P03HDL/D

12 3 4 5 6 7...9

中文翻译

下载PDF

MTB50P03HDL 替代型号

型号	品牌	替代类型	描述	数据表
MTB50P03HDLT4G	ONSEMI	类似代替	Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50P03HDLG	ONSEMI	类似代替	Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50P03HDLT4	ONSEMI	功能相似	Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK

与MTB50P03HDL相关器件

型号	品牌	获取价格	描述	数据表
MTB50P03HDLG	ONSEMI	获取价格	Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50P03HDLT4	ONSEMI	获取价格	Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50P03HDLT4G	ONSEMI	获取价格	Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
MTB50SA	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)
MTB50SAM	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)
MTB50SAV	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)
MTB50SAVM	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)
MTB50SB	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)
MTB50SBM	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)
MTB50SBV	ETC	获取价格	Full-Size (7.3mm or 4.7mm height)

与MTB50P03HDL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

22
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

14
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

44
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

43

产品中心

服务支持

精选活动

关于我们

帮助中心

MTB50P03HDL

MTB50P03HDL 技术参数

MTB50P03HDL 数据手册

MTB50P03HDL 替代型号

与MTB50P03HDL相关器件

与MTB50P03HDL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MTB50P03HDL

MTB50P03HDL 技术参数

MTB50P03HDL 数据手册

MTB50P03HDL 替代型号

与MTB50P03HDL相关器件

与MTB50P03HDL相关文章

您还可以找

您在本页遇到什么问题？