Datasheet > MT5C6408F-55

MT5C6408F-55

更新时间： 2024-02-13 11:17:33

品牌	Logo	应用领域
AUSTIN		静态存储器
页数	文件大小	规格书
12页	101K
描述
8K x 8 SRAM

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中文翻译

获取价格

数据手册

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MT5C6408F-55 数据手册

SRAM

MT5C6408

Austin Semiconductor, Inc.

8K x 8 SRAM

PIN ASSIGNMENT

(Top View)

SRAM MEMORY ARRAY

AVAILABLE AS MILITARY

28-Pin DIP (C)

(300 MIL)

28-Pin LCC (EC)

SPECIFICATIONS

• SMD 5962-38294

• MIL-STD-883

4 3

2 1 28 27 26

A12

A0 10

DQ1 11

DQ2 12

DQ3 13

Vss 14

Vcc

WE\

CE2

A11

OE\

A10

CE1\

DQ8

DQ7

DQ6

DQ5

DQ4

2 5

2 4

2 3

2 2

2 1

A11

OE\

A10

FEATURES

• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

• Battery Backup: 2V data retention

• High-performance, low-power CMOS double-metal

process

A0 1 0

DQ0 1 1

2 0 CE1\

1 9

DQ7

12 13 14 15 16 17 18

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE1\ and CE2

• All inputs and outputs are TTL compatible

28-Pin Flat Pack (F)

2 8

2 7

2 6

2 5

2 4

2 3

2 2

2 1

2 0

1 9

1 8

1 7

1 6

1 5

A12

Vcc

WE\

CE2

A11

OE\

A10

CE1\

DQ8

DQ7

DQ6

DQ5

DQ4

OPTIONS

• Timing

MARKING

12ns access

15ns access

20ns access

25ns access

35ns access

45ns access

55ns access

70ns access

-12

-15

-20

-25

-35

-45

-55*

-70*

1 0

1 1

1 2

1 3

1 4

DQ1

DQ2

DQ3

Vss

GENERAL DESCRIPTION

The MT5C6408, 8K x 8 SRAM, employs high-speed,

low-power CMOS technology, eliminating the need for clocks

or refreshing. These SRAM’s have equal access and cycle

times.

For flexibility in high-speed memory applications,

Austin Semiconductor offers dual chip enables (CE1\, CE2) and

output enable (OE\) capability. These enhancements can place

the outputs in High-Z for additional flexibility in system design.

Writing to these devices is accomplished when write

enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.

Reading is accomplished when WE\ and CE2 remain HIGH and

CE1\ and OE\ go LOW. The device offers a reduced power

standby mode when disabled. This allows system designs to

achieve low standby power requirements.

• Package(s)

Ceramic DIP (300 mil)

Ceramic LCC

No. 108

No. 204

No. 302

Ceramic Flatpack

• Operating Temperature Ranges

Industrial (-40^oC to +85^oC)

Military (-55^oC to +125^oC)

• 2V data retention/low power

*Electrical characteristics identical to those provided for the

45ns access devices.

These devices operate from a single +5V power sup-

ply and all inputs and outputs are fully TTL compatible.

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

MT5C6408

Rev. 3.0 2/01

12 3 4 5 6 7...12

中文翻译

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与MT5C6408F-55相关器件

型号	品牌	获取价格	描述	数据表
MT5C6408F-55/883C	MICROSS	获取价格	Standard SRAM, 8KX8, 55ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-55/IT	MICROSS	获取价格	Standard SRAM, 8KX8, 55ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-55/XT	MICROSS	获取价格	Standard SRAM, 8KX8, 55ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-55L/XT	MICROSS	获取价格	Standard SRAM, 8KX8, 55ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-70/883C	MICROSS	获取价格	Standard SRAM, 8KX8, 70ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-70/IT	MICROSS	获取价格	Standard SRAM, 8KX8, 70ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-70L/883C	MICROSS	获取价格	Standard SRAM, 8KX8, 70ns, CMOS, CDSO28, CERAMIC, FLATPACK-28
MT5C6408F-883C	AUSTIN	获取价格	8K x 8 SRAM
MT5C6408XDM2-25	MICROSS	获取价格	Memory IC
MT5C6408XDM3-20	MICROSS	获取价格	Memory IC

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