Datasheet > MT58L256L18F1B-6.8

MT58L256L18F1B-6.8

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
31页	349K
描述
Standard SRAM, 256KX18, 6.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119

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MT58L256L18F1B-6.8 数据手册

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4Mb : 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

119-PIN BGA

22.00 ±0.20

19.94 ±0.10

Substrate material:

BT resin laminate

0.60 ±0.10

0.90 ±0.10

14.00 ±0.10

11.94 ±0.10

0.15

2.40 MAX

SEATING PLANE

A1 CORNER

(dimension applies to a

noncollapsed solder ball)

0.75 ±0.15

1.27 (TYP)

7.62

1.27 (TYP)

20.32

MAX

NOTE: 1. All dimensions in millimeters

or typical where noted.

MIN

2. Solder ball land pad is 0.6mm.

8000 S. Fe d e ra l Wa y, P.O. Bo x 6, Bo ise , ID 83707-0006, Te l: 208-368-3900

E-m a il: p ro d m kt g @m icro n .co m , In t e rn e t : h t t p ://w w w .m icro n .co m , Cu st o m e r Co m m e n t Lin e : 800-932-4992

Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc.

QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT,

and Micron Technology, Inc.

SyncBurst is a trademark of Micron Technology, Inc.

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by

Micron Technology, Inc., and Motorola, Inc.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_D.p65 – Rev. 10/01

Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.

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