Datasheet > MT36VDDT12872G-265

MT36VDDT12872G-265

更新时间： 2024-11-24 01:03:31

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
18页	730K
描述
DDR SDRAM RDIMM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MT36VDDT12872G-265 数据手册

浏览型号MT36VDDT12872G-265的Datasheet PDF文件第2页

浏览型号MT36VDDT12872G-265的Datasheet PDF文件第3页

浏览型号MT36VDDT12872G-265的Datasheet PDF文件第4页

浏览型号MT36VDDT12872G-265的Datasheet PDF文件第5页

浏览型号MT36VDDT12872G-265的Datasheet PDF文件第6页

浏览型号MT36VDDT12872G-265的Datasheet PDF文件第7页

1GB, 2GB, 4GB (x72, ECC, DR) 184-Pin DDR RDIMM

Fe a t u re s

DDR SDRAM RDIMM

MT36VDDT12872 – 1GB¹

MT36VDDT25672 – 2GB¹

MT36VDDT51272 – 4GB

For component data sheets, refer to Micron’s Web site: www.micron.com

Fig u re 2:

Lo w -Pro file La yo u t (MO-206)

Fe a t u re s

• 184-pin, registered dual in-line memory module

PCB height: 30.48mm (1.2in)

(RDIMM)

• Standard and low profile height PCB modules

• Fast data transfer rates: PC2100 or PC2700

• 1GB (128 Meg x 72), 2GB (256 Meg x 72),

and 4GB (512 Meg x 72)

• Supports ECC error detection and correction

• VDD = VDDQ = +2.5V

• VDDSPD = +2.3V to +3.6V

Op t io n s

• Operating temperature

– Commercial (0°C ≤ T ≤ +70°C)

– Industrial (–40°C ≤ T ≤ +85°C)

Ma rkin g

• 2.5V I/ O (SSTL_2-compatible)

• Internal, pipelined double data rate (DDR)

2n-prefetch architecture

• Bidirectional data strobe (DQS) transmitted/

received with data—that is, source-synchronous

data capture

• Differential clock inputs (CK and CK#)

• Multiple internal device banks for concurrent

operation

None

• Package

– 184-pin DIMM (standard)

– 184-pin DIMM (Pb-free)

• Memory clock, speed, CAS latency

– 6.0ns (167 MHz), 333 MT/ s, CL = 2.5

– 7.5ns (133 MHz), 266 MT/ s, CL = 2

-335

-262

-26A

-265

• Dual rank

• Selectable burst lengths (BL): 2, 4, or 8

• Auto precharge option

– 7.5ns (133 MHz), 266 MT/ s, CL = 2

• Auto refresh and self refresh modes: 7.8125µs

maximum average periodic refresh interval

• Serial presence-detect (SPD) with EEPROM

• Selectable CAS latency (CL) for maximum

compatibility

Notes: 1. End of life.

2. Contact Micron for industrial temperature

module offerings.

3. CL = CAS (READ) latency; registered mode

will add one clock cycle to CL.

• Gold edge contacts

4. Not recommended for new designs.

184-Pin RDIMM Fig u re s

Fig u re 1:

St a n d a rd -He ig h t La yo u t (MO-206)

PCB height: 43.18mm (1.7in)

PDF: 09005aef809d5451/Source: 09005aef807da325

dd36c128_256_512x72.fm - Rev. F 6/08 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...18

中文翻译

下载PDF

与MT36VDDT12872G-265相关器件

型号	品牌	获取价格	描述	数据表
MT36VDDT12872G-26A	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDT12872G-335	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDT12872Y-265	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDT12872Y-335	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDT51272G	MICRON	获取价格	DDR SDRAM RDIMM
MT37	AMPHENOL	获取价格	MIL Series Connector, Aluminum Alloy; Stainless Steel, Female; Male, Crimp Terminal, Plug
MT3700N3-UV	MARKTECH	获取价格	Peak Emission Wavelength: 370nm
MT3700P-UV	MARKTECH	获取价格	Metal Can UV Emitter
MT3700W3-UV	MARKTECH	获取价格	Peak Emission Wavelength: 370nm
MT3700W-UV	MARKTECH	获取价格	Metal Can UV Emitterr

与MT36VDDT12872G-265相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

MT36VDDT12872G-265

MT36VDDT12872G-265 数据手册

与MT36VDDT12872G-265相关器件

与MT36VDDT12872G-265相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MT36VDDT12872G-265

MT36VDDT12872G-265 数据手册

与MT36VDDT12872G-265相关器件

与MT36VDDT12872G-265相关文章

您还可以找

您在本页遇到什么问题？