Datasheet > MT18VDDT6472AG-40B

MT18VDDT6472AG-40B

更新时间： 2024-11-20 00:59:23

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
29页	679K
描述
DDR SDRAM UNBUFFERED DIMM

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中文翻译

获取价格

数据手册

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256MB, 512MB, 1GB (x72, ECC, DR), PC3200

184-PIN DDR SDRAM UDIMM

MT18VDDT3272A – 256MB

MT18VDDT6472A – 512MB

DDR SDRAM

UNBUFFERED DIMM

MT18VDDT12872A – 1GB

For the latest data sheet, please refer to the Micron^Web

site: www.micron.com/products/modules

Fe a t u re s

Fig u re 1: 184-Pin DIMM (MO-206)

• 184-pin dual in-line memory module (DIMM)

• Fast data transfer rates: PC3200

• CAS Latency 3

1.25in. (31.75mm)

• Utilizes 400 MT/ s DDR SDRAM components

• Supports ECC error detection and correction

• 256MB (32 Meg x 72), 512MB (64 Meg x 72), and 1GB

(128 Meg x 72)

• VDD = VDDQ = +2.6V

• VDDSPD = +2.3V to +3.6V

• 2.6V I/ O (SSTL_2 compatible)

• Com m ands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

OPTIONS

MARKING

• Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

• Package

•

Bidirectional data strobe (DQS) transmitted/ received

with data—i.e., source-synchronous data capture

184-pin DIMM (Standard)

184-pin DIMM (Lead-free)

• Memory Clock/ Speed, CAS Latency

5ns (200MHz), 400MT/ s, CL = 3

• PCB

• Differential clock inputs CK and CK#

• Four internal device banks for concurrent operation

• Program m able burst lengths: 2, 4, or 8

• Auto precharge option

-40B

Standard 1.25in. (31.75mm)

• Auto Refresh and Self Refresh Modes

• 15.6µs (256MB), 7.8125µs (512MB, 1GB) maximum

average periodic refresh interval

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Gold edge contacts

Ta b le 1:

Ad d re ss Ta b le

256MB

512MB

1GB

Refresh Count

4K (A0–A11)

4 (BA0, BA1)

128Mb (16 Meg x 8)

1K (A0–A9)

8K (A0–A12)

4 (BA0, BA1)

8K (A0–A12)

4 (BA0, BA1)

Row Addressing

Device Bank Addressing

Device Configuration

Column Addressing

Module Rank Addressing

256Mb (32 Meg x 8)

1K (A0–A9)

512Mb (64 Meg x 8)

2K (A0–A9, A11)

2 (S0#, S1#)

pdf: 09005aef80814e61, source: 09005aef80a43eed

DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...29

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与MT18VDDT6472AG-40B相关器件

型号	品牌	获取价格	描述	数据表
MT18VDDT6472AY-40B	MICRON	获取价格	DDR SDRAM UNBUFFERED DIMM
MT18VDVF12872D	MICRON	获取价格	DDR SDRAM VLP Registered DIMM
MT18VDVF12872DG	MICRON	获取价格	DDR SDRAM VLP Registered DIMM
MT18VDVF6472D	MICRON	获取价格	DDR SDRAM VLP Registered DIMM
MT1910	SUMIDA	获取价格	MODEM Transformer
MT-1A	RIEDON	获取价格	Low Ohm Power Resistors
MT-1A0.00432OHM1%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 1W, 0.00432ohm, 1% +/-Tol, -20,20ppm/Cel
MT-1A0.0043OHM5%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 1W, 0.0043ohm, 5% +/-Tol, -20,20ppm/Cel
MT-1A0.00536OHM1%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 1W, 0.00536ohm, 1% +/-Tol, -20,20ppm/Cel
MT-1A0.0243OHM1%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 1W, 0.0243ohm, 1% +/-Tol, -20,20ppm/Cel

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