MSS20-xxx-x Series
Zero Bias Schottky Diodes
Rev. V2
Features
Very Low 1/f Noise
Detector Applications up to 40 GHz
Chip Beam Lead and Packaged Devices
Description
The MSS20-xxx-x Series of Schottky diodes is
fabricated on P-Type epitaxial substrates for
superior 1/f noise performance in microwave 0-bias
detector applications up to 40 GHz.
Chip
Electrical Specifications: TA = 25°C
CJ
Max.
pF
TSS
Typ.
dBm
RV
Min.
Ω
RV
Max.
Ω
ϓ
Typ.
mV / mW
Frequency
Max.
Model
Outline
GHz
MSS20-046-C15
MSS20-047-C15
MSS20-050-C15
MSS20-051-C15
MSS20-054-C15
MSS20-055-C15
0.10
0.10
0.15
0.15
0.20
0.20
-58
-59
-58
-59
-58
-59
1000
2000
1000
2000
1000
2000
2000
6000
2000
6000
2000
6000
5000
8000
5000
8000
5000
8000
18
18
12
12
8
C15
C15
C15
C15
C15
C15
8
f = 1 MHz,
VR = 0 V
f = 10 GHz,
NF = 3 dB
PIN = -30 dBm
Video BW = 500 KHz
Test Conditions
RL = 1 MΩ
Beam Lead
Electrical Specifications: TA = 25°C
CJ
Max.
pF
TSS
Typ.
dBm
RV
Min.
Ω
RV
Max.
Ω
ϓ
Typ.
mV / mW
Frequency
Max.
Model
Outline
GHz
MSS20-140-B10D
MSS20-141-B10D
MSS20-142-B10D
MSS20-143-B10D
MSS20-145-B10D
MSS20-146-B10D
0.08
0.08
0.10
0.10
0.12
0.12
-58
-59
-58
-59
-58
-59
1000
2000
1000
2000
1000
2000
2000
6000
2000
6000
2000
6000
5000
8000
5000
8000
5000
8000
40
40
26
26
18
18
B10D
B10D
B10D
B10D
B10D
B10D
f = 1 MHz,
VR = 0 V
f = 10 GHz,
NF = 3 dB
PIN = -30 dBm
Video BW = 500 KHz
Test Conditions
RL = 1 MΩ
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1
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