Datasheet > MSRT100120AD

MSRT100120AD

更新时间： 2024-02-12 19:10:45

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	670K
描述
Silicon Standard Recovery Diode

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中文翻译

获取价格

数据手册

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MSRT100120AD 数据手册

MSRT100120(A)D thru MSRT100160(A)D

V_RRM= 1200 V - 1600 V

I_F(AV)= 100 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 1200 V to 1600 V V_RRM

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

MSRT100XXXAD

MSRT100XXXADR

MSRT100XXXD

Maximum ratings, at T_j= 25 °C, unless otherwise specified

Conditions

MSRT100120(A)D MSRT100140(A)D MSRT100160(A)D

Parameter

Symbol

Unit

V_RRM

V_RMS

V_DC

T_j

1200

848

1400

990

1600

1131

Repetitive peak reverse voltage

RMS reverse voltage

1200

1400

1600

DC blocking voltage

-55 to 150

Operating temperature

Storage temperature

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 140 °C

MSRT100120(A)D MSRT100140(A)D MSRT100160(A)D

Parameter

Symbol

I_F(AV)

I_FSM

Unit

Average forward current (per

leg)

100

2000

1.1

100

2000

1.1

100

2000

1.1

Peak forward surge current

(per leg)

t_p= 8.3 ms, half sine

I_FM= 100 A, T_j= 25 °C

Maximum instantaneous

forward voltage (per leg)

V_F

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

T_j= 25 °C

μA

I_R

T_j= 150 °C

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R_Θjc

0.45

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/msrt100160ad.pdf

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