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MSP430F2618TGQWTEP PDF预览

MSP430F2618TGQWTEP

更新时间: 2024-11-21 12:20:23
品牌 Logo 应用领域
德州仪器 - TI 微控制器和处理器外围集成电路装置时钟
页数 文件大小 规格书
92页 1221K
描述
MIXED SIGNAL MICROCONTROLLER

MSP430F2618TGQWTEP 技术参数

生命周期:Lifetime Buy零件包装代码:BGA
包装说明:PLASTIC, BGA-113针数:113
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.31.00.01Factory Lead Time:1 week
风险等级:7.96Is Samacsys:N
具有ADC:YES其他特性:ALSO OPERATES AT 1.8V MINIMUM SUPPLY AT 4.15 MHZ
地址总线宽度:位大小:16
边界扫描:YESCPU系列:MSP430
最大时钟频率:16 MHzDAC 通道:YES
DMA 通道:YES外部数据总线宽度:
格式:FIXED POINT集成缓存:NO
JESD-30 代码:S-PBGA-B113JESD-609代码:e0
长度:7 mm低功率模式:YES
湿度敏感等级:3DMA 通道数量:3
外部中断装置数量:I/O 线路数量:64
串行 I/O 数:4端子数量:113
计时器数量:10片上数据RAM宽度:8
片上程序ROM宽度:8最高工作温度:105 °C
最低工作温度:-40 °CPWM 通道:YES
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA113,12X12,20封装形状:SQUARE
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):235
电源:2/3.3 V认证状态:Not Qualified
RAM(字节):8192ROM(单词):118784
ROM可编程性:FLASH座面最大高度:1 mm
速度:16 MHz子类别:Microcontrollers
最大压摆率:0.595 mA最大供电电压:3.6 V
最小供电电压:2.2 V标称供电电压:2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER, RISC
Base Number Matches:1

MSP430F2618TGQWTEP 数据手册

 浏览型号MSP430F2618TGQWTEP的Datasheet PDF文件第2页浏览型号MSP430F2618TGQWTEP的Datasheet PDF文件第3页浏览型号MSP430F2618TGQWTEP的Datasheet PDF文件第4页浏览型号MSP430F2618TGQWTEP的Datasheet PDF文件第5页浏览型号MSP430F2618TGQWTEP的Datasheet PDF文件第6页浏览型号MSP430F2618TGQWTEP的Datasheet PDF文件第7页 
MSP430F2618-EP  
MIXED SIGNAL MICROCONTROLLER  
SLAS632 -- DECEMBER 2008  
D
Supply Voltage Supervisor/Monitor With  
Programmable Level Detection  
FEATURES  
D
D
Low Supply Voltage Range, 1.8 V to 3.6 V  
D
D
D
Brownout Detector  
Bootstrap Loader  
Ultra-Low Power Consumption:  
-- Active Mode: 365 A at 1 MHz, 2.2 V  
-- Standby Mode (VLO): 0.5 A  
Serial Onboard Programming,  
No External Programming Voltage Needed  
Programmable Code Protection by Security  
Fuse  
-- Off Mode (RAM Retention): 0.1 A  
D
D
Wake-Up From Standby Mode in Less  
Than 1 s  
D
D
D
116KB+256B Flash Memory, 8KB RAM  
Available in 113-Pin Ball Grid Array (BGA)  
16-Bit RISC Architecture,  
62.5-ns Instruction Cycle Time  
D
D
Three-Channel Internal DMA  
For Complete Module Descriptions, See the  
MSP430x2xx Family User’s Guide,  
Literature Number SLAU144  
12-Bit Analog-to-Digital (A/D) Converter  
With Internal Reference, Sample-and-Hold,  
and Autoscan Feature  
SUPPORTS DEFENSE, AEROSPACE, AND  
MEDICAL APPLICATIONS  
D
D
D
Dual 12-Bit Digital-to-Analog (D/A)  
Converters With Synchronization  
D
D
D
D
D
D
D
Controlled Baseline  
16-Bit Timer_A With Three  
Capture/Compare Registers  
One Assembly/Test Site  
One Fabrication Site  
16-Bit Timer_B With Seven  
Capture/Compare-With-Shadow Registers  
Extended Product Life Cycle  
Extended Product--Change Notification  
Product Traceability  
D
D
On-Chip Comparator  
Four Universal Serial Communication  
Interfaces (USCIs)  
SnPb Solder Ball Alloy for Increased  
Reliability  
-- USCI_A0 and USCI_A1  
-- Enhanced UART Supporting  
Auto-Baudrate Detection  
-- IrDA Encoder and Decoder  
-- Synchronous SPI  
-- USCI_B0 and USCI_B1  
2
-- I Ct  
-- Synchronous SPI  
description  
The Texas Instruments MSP430 family of ultralow-power microcontrollers consists of several devices featuring  
different sets of peripherals targeted for various applications. The architecture, combined with five low-power  
modes is optimized to achieve extended battery life in portable measurement applications. The device features  
a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code  
efficiency. The calibrated digitally controlled oscillator (DCO) allows wake-up from low-power modes to active  
mode in less than 1 s.  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure toobserve properhandling andinstallation procedures can causedamage. ESDdamage canrange  
from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage  
because very small parametric changes could cause the device not to meet its published specifications. These devices have limited  
built-in ESD protection.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
I C is a registered trademark of Philips Incorporated.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
Copyright 2008, Texas Instruments Incorporated  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

MSP430F2618TGQWTEP 替代型号

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