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MSM548512L-80RS PDF预览

MSM548512L-80RS

更新时间: 2024-01-30 12:07:16
品牌 Logo 应用领域
冲电气 - OKI 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 162K
描述
524,288-Word X 8-Bit High-Speed PSRAM

MSM548512L-80RS 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:80 ns其他特性:CE/AUTO/SELF REFRESH
JESD-30 代码:R-PDIP-T32长度:41.7 mm
内存密度:4194304 bit内存集成电路类型:PSEUDO STATIC RAM
内存宽度:8功能数量:1
端口数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:5.15 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:15.24 mm
Base Number Matches:1

MSM548512L-80RS 数据手册

 浏览型号MSM548512L-80RS的Datasheet PDF文件第3页浏览型号MSM548512L-80RS的Datasheet PDF文件第4页浏览型号MSM548512L-80RS的Datasheet PDF文件第5页浏览型号MSM548512L-80RS的Datasheet PDF文件第7页浏览型号MSM548512L-80RS的Datasheet PDF文件第8页浏览型号MSM548512L-80RS的Datasheet PDF文件第9页 
¡ Semiconductor  
MSM548512L  
AC Characteristics  
Measurement condition:  
Input pulse level ........................... V = 2.4 V, V = 0.4 V  
IH IL  
Output reference level.................. V  
= 2.0 V, V = 0.8 V  
OH  
OL  
Rising and falling time................. 5 ns  
Output load .................................... 1 TTL + 100 pF  
Input timing reference level........ High = 2.2 V, Low = 0.8 V  
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C)  
MSM548512L MSM548512L MSM548512L  
-80  
-10  
-12  
Parameter  
Symbol  
Unit Note  
Min.  
160  
220  
20  
0
Max.  
80  
30  
25  
25  
10m  
20  
50  
8m  
Min. Max.  
Min. Max.  
tRC  
tRWC  
tCEA  
tOEA  
tCHZ  
tCLZ  
tOHZ  
tOLZ  
tCE  
Random Read Write Cycle Time  
Random Read Modify Write Cycle Time  
CE Access Time  
180  
240  
20  
0
100  
30  
30  
25  
10m  
25  
50  
8m  
210  
280  
20  
0
120  
50  
30  
30  
10m  
30  
50  
8m  
ns  
ns  
ns  
ns  
OE Access Time  
Chip Disable to Output in High-Z  
CE to Output in Low-Z  
OE Disable to Output in High-Z  
OE Output in Low-Z  
ns  
ns  
ns  
ns  
s
6
6
CE Pulse Width  
80n  
70  
0
100n  
70  
0
120n  
80  
0
tP  
CE Precharge Time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAS  
Address Set-up Time  
tAH  
Address Hold Time  
20  
0
25  
0
30  
0
tRCS  
tRCH  
tOHC  
tOCD  
tWP  
tCW  
tDW  
tDH  
Read Command Set-up Time  
Read Command Hold Time  
OE Command Hold Time  
OE Delay Time  
0
0
0
15  
0
15  
0
15  
0
Write Command Pulse Width  
Chip Enable Time  
25  
80  
20  
0
35  
120  
30  
0
30  
100  
25  
0
Input Data Set Time  
Input Data Hold Time  
tOW  
tWHZ  
tT  
Output Active from End of Write  
Write Enable to Output in High-Z  
Transition Time  
5
5
5
3
3
3
6
ns 11  
tRFD  
tFP  
tFAP  
tFC  
RFSH Delay Time from CE  
RFSH Precharge Time  
70  
40  
80n  
160  
8
70  
40  
80n  
180  
8
80  
40  
80n  
210  
8
ns  
ns  
s
RFSH Pulse Width (Auto-refresh)  
Auto-refresh Cycle Time  
RFSH Pulse Width (Self-refresh)  
ns  
ms  
tFAS  
CE Delay Time from RFSH  
tRFS  
tREF  
600  
32  
600  
32  
600  
32  
ns  
in Self-refresh Mode  
Refresh Period (2048 cycle/32 ms)  
ms  
6/12  

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