¡ Semiconductor
MSM548512L
AC Characteristics
Measurement condition:
Input pulse level ........................... V = 2.4 V, V = 0.4 V
IH IL
Output reference level.................. V
= 2.0 V, V = 0.8 V
OH
OL
Rising and falling time................. 5 ns
Output load .................................... 1 TTL + 100 pF
Input timing reference level........ High = 2.2 V, Low = 0.8 V
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C)
MSM548512L MSM548512L MSM548512L
-80
-10
-12
Parameter
Symbol
Unit Note
Min.
160
220
—
—
—
20
—
0
Max.
—
—
80
30
25
—
25
—
10m
—
—
—
—
—
—
—
—
—
—
—
—
20
50
—
—
8m
—
—
Min. Max.
Min. Max.
tRC
tRWC
tCEA
tOEA
tCHZ
tCLZ
tOHZ
tOLZ
tCE
Random Read Write Cycle Time
Random Read Modify Write Cycle Time
CE Access Time
180
240
—
—
—
20
—
0
—
—
100
30
30
—
25
—
10m
—
—
—
—
—
—
—
—
—
—
—
—
25
50
—
—
8m
—
—
210
280
—
—
—
20
—
0
—
—
120
50
30
—
30
—
10m
—
—
—
—
—
—
—
—
—
—
—
—
30
50
—
—
8m
—
—
ns
ns
ns
ns
OE Access Time
Chip Disable to Output in High-Z
CE to Output in Low-Z
OE Disable to Output in High-Z
OE Output in Low-Z
ns
ns
ns
ns
s
6
6
CE Pulse Width
80n
70
0
100n
70
0
120n
80
0
tP
CE Precharge Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAS
Address Set-up Time
tAH
Address Hold Time
20
0
25
0
30
0
tRCS
tRCH
tOHC
tOCD
tWP
tCW
tDW
tDH
Read Command Set-up Time
Read Command Hold Time
OE Command Hold Time
OE Delay Time
0
0
0
15
0
15
0
15
0
Write Command Pulse Width
Chip Enable Time
25
80
20
0
35
120
30
0
30
100
25
0
Input Data Set Time
Input Data Hold Time
tOW
tWHZ
tT
Output Active from End of Write
Write Enable to Output in High-Z
Transition Time
5
5
5
—
3
—
3
—
3
6
ns 11
tRFD
tFP
tFAP
tFC
RFSH Delay Time from CE
RFSH Precharge Time
70
40
80n
160
8
70
40
80n
180
8
80
40
80n
210
8
ns
ns
s
RFSH Pulse Width (Auto-refresh)
Auto-refresh Cycle Time
RFSH Pulse Width (Self-refresh)
ns
ms
tFAS
CE Delay Time from RFSH
tRFS
tREF
600
—
—
32
600
—
—
32
600
—
—
32
ns
in Self-refresh Mode
Refresh Period (2048 cycle/32 ms)
ms
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