Datasheet > MSM548512L

MSM548512L

更新时间： 2022-11-25 14:40:07

品牌	Logo	应用领域
冲电气 - OKI		静态存储器
页数	文件大小	规格书
12页	162K
描述
524,288-Word X 8-Bit High-Speed PSRAM

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MSM548512L 数据手册

¡ Semiconductor

MSM548512L

FUNCTION TABLE

OE/RFSH

I/O Pin

Low-Z

High-Z

Mode

Read

Write

—

Refresh

Standby

L : Low Level Input

H : High Level Input

X : Don’t Care

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Voltage on Any Pin from V_SS*1

Power Dissipation

V_T

P_D

–1.0 to 7.0

1.0

T_opr

T_stg

Operating Temperature

Storage Temperature

0 to 70

–55 to 125

–10 to 85

°C

T_bias

I_OS

Storage Temperature (biased)

Short Circuit Output Current

°C

To V

Note:

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to the conditions as detailed

in the operational sections of this data sheet. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Recommended Operating Conditions

(Ta = 0°C to 70°C)

Parameter

Power Supply Voltage

Symbol

Min.

4.5

Typ.

5.0

Max.

5.5

Unit

V_CC

V_SS

V_IH

V_IL

2.4

–0.5

—

6.0

0.8

Input Voltage

—

4/12

1 2 345 6 7...12

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