Datasheet > MSG061P03G

MSG061P03G

更新时间： 2024-11-19 01:25:23

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
11页	833K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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MSG061P03G 数据手册

MSG061P03G

P-Channel Enhancement Mode MOSFET

■ Features

■ Pin Description

• -30V/-40A

R_DS(ON)= 6.1mΩ (max.) @ V_GS= -10V

R_DS(ON)= 11mΩ (max.) @ V_GS= -4.5V

• HBM ESD protection level pass 8KV.

• 100% UIS+R_gtested.

• Reliable and Rugged.

• Lead free and green device available

(RoHS compliant).

PIN 1

DFN3.3x3.3-8(Saw-EP)

Note: The diode connected between the gate and

source serves only as protection against ESD.

No gate overvoltage rating is implied.

( 5,6,7,8 )

DDD

■ Application

• Power management in notebook computer

portable equipment and battery powered

system.

(4)

S S S

(1, 2, 3)

P-ChannelMOSFET

■ Absolute Maximum Ratings (T_A= 25^OC unless otherwise specified)

Symbol

V_DSS

PARAMETER

CONDITIONS

MSL120N06G

UNIT

Drain-Source Voltage

-30

-40

T_C= 25^OC

T_C= 100^OC

T_C= 25^OC

I_D

Continuous Drain Current(Note:2)

-40

I_DM

V_GSS

I_S

Pulsed Drain Current(Note:2)

-160

±25

-40

Gate-Source Voltage

Diode Continuous Forward Current(Note:2)

Avalanche Current, single pulse (Note:1)

Avalanche Energy, single pulse (Note:1)

T_C= 25^OC

L=0.5mH

T_C= 25^OC

T_C= 100^OC

t ≤ 10s

I_AS

E_AS

182

62.5

Maximum Power Dissipation

P_D

^OC/W

^OC

Thermal Resistance-Junction to Ambient

Operating and Storage Temperature Range

Maximum Power Dissipation

R_θJA

T_J, T_STG

P_D

Steady State

-55 ~ +150

4.2

T_A= 25^OC

T_A= 70^OC

T_A= 25^OC

T_A= 70^OC

Steady State

2.7

-21.3

-17.1

Continuous Drain Current

I_D

^OC/W

Thermal Resistance-Junction to case

R_θJC

NOTE : 1.UIS tested and pulse width limited by maximum junction temperature 150^OC (initial temperature T_J=25^OC).

2.Package limited.

Document ID : DS-22M72

Revised Date : 2015/08/18

Revision : C

12 3 4 5 6 7...11

中文翻译

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