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MSG061P03G PDF预览

MSG061P03G

更新时间: 2024-11-06 01:25:23
品牌 Logo 应用领域
竹懋 - CITC /
页数 文件大小 规格书
11页 833K
描述
P-Channel Enhancement Mode MOSFET

MSG061P03G 数据手册

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MSG061P03G  
P-Channel Enhancement Mode MOSFET  
Features  
Pin Description  
-30V/-40A  
RDS(ON) = 6.1mΩ (max.) @ VGS= -10V  
RDS(ON) = 11mΩ (max.) @ VGS= -4.5V  
HBM ESD protection level pass 8KV.  
100% UIS+Rg tested.  
D
D
D
D
Reliable and Rugged.  
Lead free and green device available  
(RoHS compliant).  
PIN 1  
G
S
S
S
DFN3.3x3.3-8(Saw-EP)  
Note: The diode connected between the gate and  
source serves only as protection against ESD.  
No gate overvoltage rating is implied.  
( 5,6,7,8 )  
DDD  
D
Application  
Power management in notebook computer  
portable equipment and battery powered  
system.  
(4)  
G
S S S  
(1, 2, 3)  
P-ChannelMOSFET  
Absolute Maximum Ratings (TA = 25OC unless otherwise specified)  
Symbol  
VDSS  
PARAMETER  
CONDITIONS  
MSL120N06G  
UNIT  
V
Drain-Source Voltage  
-30  
-40  
TC = 25OC  
TC = 100OC  
TC = 25OC  
ID  
Continuous Drain Current(Note:2)  
A
-40  
IDM  
VGSS  
IS  
Pulsed Drain Current(Note:2)  
-160  
±25  
-40  
Gate-Source Voltage  
V
A
Diode Continuous Forward Current(Note:2)  
Avalanche Current, single pulse (Note:1)  
Avalanche Energy, single pulse (Note:1)  
TC = 25OC  
L=0.5mH  
L=0.5mH  
TC = 25OC  
TC = 100OC  
t ≤ 10s  
IAS  
27  
A
EAS  
182  
62.5  
25  
mJ  
Maximum Power Dissipation  
PD  
W
30  
OC/W  
OC  
Thermal Resistance-Junction to Ambient  
Operating and Storage Temperature Range  
Maximum Power Dissipation  
RθJA  
TJ, TSTG  
PD  
Steady State  
75  
-55 ~ +150  
4.2  
TA = 25OC  
TA = 70OC  
TA = 25OC  
TA = 70OC  
Steady State  
W
2.7  
-21.3  
-17.1  
2
Continuous Drain Current  
ID  
A
OC/W  
Thermal Resistance-Junction to case  
RθJC  
NOTE : 1.UIS tested and pulse width limited by maximum junction temperature 150OC (initial temperature TJ =25OC).  
2.Package limited.  
Document ID : DS-22M72  
Revised Date : 2015/08/18  
Revision : C  
1

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