Datasheet > MSCC60VRM99CT3AG-Module

MSCC60VRM99CT3AG-Module

更新时间： 2024-12-02 14:55:23

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	346K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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MSCC60VRM99CT3AG

Super junction MOSFET:

Vienna Rectifier

MOSFET Power Module

V_DSS= 600V ; R_DSon= 99m Max @ Tj = 25°C

I_D= 28A @ Tc = 25°C

Application

Power supply

 AlN substrate for improved thermal performance

 Internal thermistor for temperature monitoring

 Kelvin emitter for easy drive

 Very low stray inductance

 High level of integration



Features



Super junction MOSFET

Ultra low R_DSon

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

Very rugged

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant



SiC Schottky diode

Zero reverse recovery

Zero forward recovery

Temp. Independent switching behavior

Positive temperature coefficient on VF

Electrical scheme:

Pin out Location:

These Devices are sensitive

to Electrostatic Discharge. Proper Handling

Procedures Should Be Followed. See

application

note

APT0502

www.microsemi.com

All ratings @ T_j= 25°C unless otherwise specified

1 - 8

www.microsemi.com

12 3 4 5 6 7 8

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