Datasheet > MSA-0886-TR2

MSA-0886-TR2

更新时间： 2024-11-25 15:44:43

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
4页	71K
描述
Wide Band Low Power Amplifier, BIPolar,

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技术参数
数据手册

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MSA-0886-TR2 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SL,4GW-LD,.085CIR	Reach Compliance Code：	unknown
风险等级：	5.05	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	13 dBm
安装特点：	SURFACE MOUNT	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SL,4GW-LD,.085CIR
电源：	7.8 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	36 mA
表面贴装：	YES	技术：	BIPOLAR
最大电压驻波比：	1.9	Base Number Matches：	1

MSA-0886-TR2 数据手册

Agilent MSA-0886

Cascadable Silicon Bipolar

MMIC Amplifier

Data Sheet

Features

• Lead-free Option Available

• Usable Gain to 5.5 GHz

• High Gain:

32.5 dB Typical at 0.1 GHz

22.5 dB Typical at 1.0 GHz

Description

86 Plastic Package

• Low Noise Figure:

The MSA-0886 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a low cost,

surface mount plastic package.

This MMIC is designed for use as a

general purpose 50 Ω gain block

above 0.5 GHz and can be used as

a high gain transistor below this

frequency. Typical applications

include narrow and moderate band

IF and RF amplifiers in commer-

cial and industrial applications.

3.3 dB Typical at 1.0 GHz

• Surface Mount Plastic

Package

• Tape-and-Reel Packaging

Option Available

• Lead-free Option Available

Typical Biasing Configuration

bias

V_CC

> 10 V

RFC (Optional)

The MSA-series is fabricated using

Agilent’s 10 GHz f , 25 GHz f

MAX

block

silicon bipolar MMIC process

MSA

OUT

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent perfor-

mance, uniformity and reliability.

The use of an external bias resistor

for temperature and current

= 7.8 V

stability also allows bias flexibility.

12 3 4

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