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MS1578 PDF预览

MS1578

更新时间: 2024-02-14 01:47:16
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波蜂窝
页数 文件大小 规格书
5页 352K
描述
RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION

MS1578 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XDFM-F4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65其他特性:HIGH RELIABILITY
外壳连接:EMITTER最大集电极电流 (IC):25 A
集电极-发射极最大电压:28 V配置:SINGLE
最小直流电流增益 (hFE):25最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-XDFM-F4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1578 数据手册

 浏览型号MS1578的Datasheet PDF文件第2页浏览型号MS1578的Datasheet PDF文件第3页浏览型号MS1578的Datasheet PDF文件第4页浏览型号MS1578的Datasheet PDF文件第5页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1578  
RF & MICROWAVE TRANSISTORS  
800-960MHz CELLULAR BASE STATION  
Features  
·
GOLD METALLIZATION  
·
DESIGNED FOR LINEAR OPERATION HIGH SATURATED  
POWER CAPABILITY  
·
·
·
·
·
·
·
POUT = 150 W PEP  
INTERNAL INPUT/OUTPUT MATCHING  
COMMON EMITTER CONFIGURATION  
8.0dB GAIN @ 900 MHz  
MAX IMD -28dBc @ 150 W PEP  
5:1 VSWR CAPABILITY @ RATED CONDITIONS  
3 dB OVERDRIVE CAPABILITY  
DESCRIPTION:  
THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN  
PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB  
OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE  
MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz  
CELLULAR BASE STATION APPLICATIONS.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
Parameter  
Value  
Unit  
V
VCEO  
Collector-Emitter Voltage  
28  
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Device Current  
65  
3.5  
V
V
25  
A
PDISS  
TJ  
Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
+200  
W
°C  
°C  
TSTG  
- 65 to + 150  
Thermal Data  
RTH(j-c)  
Junction-Case Thermal Resistance  
0.60  
°C/W  
MSC0890.PDF  

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